HYBRID OM2060
Abstract: OM2060 gt 6312 SC16
Text: DISCRETE SEMICONDUCTORS DATA SHEET OM2060 Wideband amplifier module Product specification File under Discrete Semiconductors, SC16 1995 Nov 13 Philips Semiconductors Product specification Wideband amplifier module OM2060 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. The device is intended for use
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OM2060
SCD45
143061/1000/01/pp12
HYBRID OM2060
OM2060
gt 6312
SC16
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HYBRID OM2060
Abstract: OM2060 QM2060
Text: Philips Semiconductors Product specification Wideband amplifier module OM2060 DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit form on a thin-film substrate. T h e device is intended for use in m ast-head booster amplifiers, as an preamplifier in M A T V system s and as a general purpose amplifier for V H F and
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OM2060
711002b
0CHS713
HYBRID OM2060
OM2060
QM2060
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HYBRID OM2060
Abstract: OM2060 philips om2060
Text: N AMER PHILIPS/DISCRETE bTE D • ^53^31 0D3E4flb TGT * A P X OM2060 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended for use in mast-head booster-amplifiers, as preamplifier in MATV systems, and as general-purpose ampli
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OM2060
HYBRID OM2060
OM2060
philips om2060
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Text: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
bf0262a
BF0262
OM335
1N5821ID
OM336
OM2061
OM926
BUK645
OM2060
BLY94
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Concise Catalogue 1996 RF & MICROWAVE SEMICONDUCTORS & MODULES MODULES Wideband amplifiers GENERAL-PURPOSE HYBRID AMPLIFIERS supply stages qain current type number mA (dB) noise figure (dB) output at 1 dB gain comp (dBm) third-order
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DIN45004A1)
OM2045
OM2050
OM2052
OM2060
OM2063
OM2070
OM926/E
OM3056/204'
OM956/114)
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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HYBRID OM2060
Abstract: OM2060
Text: Jv O M 2060 HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Three-stage wide-band am plifier in hybrid integrated circu it technique on a th in -film substrate, intended fo r use in mast-head booster-amplifiers, as pream piifier in M A T V systems, and as general-purpose am pli
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OM2060
CM2060
7Z82897
7Z82896
HYBRID OM2060
OM2060
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OM2061
Abstract: OM2060 OM2070
Text: 73 RF/M icrowave Devices C A TV Am plifier Modules co n t. Notes 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 provisional data/advance information measured at 175.25 MHz (ch 7 with VQ = 50 dBm V intermodulation distortion = -6 0 dB (DIN 45004, para. 6.3 : tone), Vp = VOI fp = 35.25 MHz, Vq = V0- 6 dB, fq = 42.25 MHz,
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25MHz
fig-91
OM2070B
OM20814
OM2061
OM2060
OM2070
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