NX7561JB
Abstract: NX7561JB-BA laser diode 1550 ns single mode
Text: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION NX7561JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width PW = 10ms, Duty = 1% The NX7561JB is a 1550 nm developed strained Multiple
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NX7561JB
NX7561JB
NX7561JB-BA
laser diode 1550 ns single mode
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NX7561JB-BC
Abstract: NX7561JB-BC-AZ
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP
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NX7561JB-BC
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otdr
Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7561JB-BC 81 110 thermistor
Text: DATA SHEET LASER DIODE NX7561JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION DESCRIPTION The NX7561JB-BC is a 1 550 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.
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NX7561JB-BC
NX7561JB-BC
14-pin
otdr
NX7327BF-AA
NX7328BF-AA
NX7329BB-AA
NX7361JB-BC
NX7526BF-AA
NX7527BF-AA
81 110 thermistor
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW-DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION NX7561JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width PW = 10ms, Duty = 1% The NX7561JB is a 1550 nm developed strained Multiple
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Laser FP 1550 mW
Abstract: NX7561JB-BC
Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP
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NX7561JB-BC
NX7561JB-BC
Laser FP 1550 mW
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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310 thermistor
Abstract: k 2545 NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7528BF-AA OTDR
Text: DATA SHEET LASER DIODE NX7361JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION The NX7361JB-BC is a 1 310 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.
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NX7361JB-BC
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310 thermistor
k 2545
NX7327BF-AA
NX7328BF-AA
NX7329BB-AA
NX7526BF-AA
NX7527BF-AA
NX7528BF-AA
OTDR
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10G EML TOSA
Abstract: TOSA 10G DFB EML TOSA 25g 10G APD ROSA TOSA 10G EML laser DFB 1550nm 10mW NEC TOSA 10G 10g tosa EML 25g EML TOSA TOSA 1310 10G
Text: NEC Fiber Optic Components January 2004 With over 100 years’ experience in communications technology, few companies can match NEC for strength and stability. The company’s manufacturing facilities are the most advanced in the world and their products are widely
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acros88-2247
04/2M
10G EML TOSA
TOSA 10G DFB
EML TOSA 25g
10G APD ROSA
TOSA 10G EML
laser DFB 1550nm 10mW
NEC TOSA 10G
10g tosa EML
25g EML TOSA
TOSA 1310 10G
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple
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otdr
Abstract: NX7327BF-AA NX7328BF-AA NX7329BB-AA NX7361JB-BC NX7526BF-AA NX7527BF-AA NX7661JB-BC
Text: DATA SHEET LASER DIODE NX7661JB-BC InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB-BC is a 1 625 nm Multiple Quantum Well MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler.
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NX7661JB-BC
NX7661JB-BC
14-pin
otdr
NX7327BF-AA
NX7328BF-AA
NX7329BB-AA
NX7361JB-BC
NX7526BF-AA
NX7527BF-AA
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thermistor 102
Abstract: NX7561JB NX7661JB NX7661JB-BA
Text: PRELIMINARY DATA SHEET InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1625 nm OTDR APPLICATION NX7661JB FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width PW = 10 ms, Duty = 1% The NX7661JB is a 1625 nm developed strained Multiple
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thermistor 102
NX7561JB
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310 thermistor
Abstract: COAXIAL AUDIO ic nec laser diode OTDR NDL7103 NDL7113 NDL7153 NDL7163 NDL7503P NDL7513P NX7661JB
Text: PRELIMINARY DATA SHEET LASER DIODE NX7661JB InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION DESCRIPTION The NX7661JB is a 1 625 nm newly developed Strained Multiple Quantum Well St-MQW structure pulsed laser diode DIP module with single mode fiber and internal thermoelectric cooler. It is designed for light sources of optical
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NX7661JB
NX7661JB
14-pin
310 thermistor
COAXIAL AUDIO ic
nec laser diode OTDR
NDL7103
NDL7113
NDL7153
NDL7163
NDL7503P
NDL7513P
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