Untitled
Abstract: No abstract text available
Text: QUAD OPERATIONAL AM PLIFIER g jw c l NJM2059 T he NJM20S9 integrated circuit is a quad high-gain operational amplifier internally com pensated and constructed on single silicon chip using an advanced epitaxial process. The NJM2059 has wider unity gain band-width and larger slew rate com pared to the NJM2058.
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NJM2059
NJM20S9
NJM2059
NJM2058.
NJM4559.
700mW
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Untitled
Abstract: No abstract text available
Text: o p OPERATIONAL AM PLIFIER NJM2059 T he NJM2059 integrated circuit is a quad high-gain operational am plifier internally com pensated and constructed on a single silicon chip using an advanced epitaxial process. T he NJM2059 has wider unity gain band-w idth and larger slew rate com pared to the NJM2058.
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NJM2059
NJM2059
NJM2058.
NJM4559.
20S9M
--40dB,
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lm324n equivalent
Abstract: LM1380 072BD MS218P 082c CI 074C LM358N equivalent RC4558P equivalent ta7508f BA15218 equivalent
Text: «JlL * OPERATIONAL AMPLIFIER CROSS REFERENCE • Bipolar NJRC Functions Quad Single Supply Type Type No. N -S NJM2902N LM2902N NJM2SC2M NJM3403AD NJM3403AM NJM324D NJM2904D NJM2904M Trans conducance Du«] Low N oise Dual LM&toN LM358N NJM2904L NJM3404AD NJM3404AM
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NJM2902N
NJM3403AD
NJM3403AM
NJM324D
NJM324M
NJM2904D
NJM2904M
NJM2904L
NJM3404AD
NJM3404AM
lm324n equivalent
LM1380
072BD
MS218P
082c
CI 074C
LM358N equivalent
RC4558P equivalent
ta7508f
BA15218 equivalent
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Untitled
Abstract: No abstract text available
Text: Cj r c 3 QUAD OPERATIONAL AMPLIFIER NJM2059 The NJM2059 integrated circuit is a quad high-gain operational amplifier internally compensated and constructed on a single silicon chip using an advanced epitaxial process. The NJM2059 has wider unity gain band-width and larger slew rate compared to the NJM2058.
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PDF
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NJM2059
NJM2059
NJM2058.
NJM4559.
125nt
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Untitled
Abstract: No abstract text available
Text: NJM2059 QUAD OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION ■ PACKAGE OUTLINE T he N JM 2 0 5 9 in teg rated c irc u it is a q u ad h ig h -g ain o perational am p lifier internally co m p en sated and co n stru cted on a single silicon chip u sing an advanced epitaxial process.
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NJM2059
2059N
HJM2059V
--40dB,
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