IN5815

Abstract: NES501 NES601 NES502 NES503 NES504 NES505 NES701 NES702 NES703
Contextual Info: N EW ENGLAND SEMICONDUCTOR ULTRA-FAST RECTIFIERS PIV VOLTS If avg AMPS VF @ IF (avg) VOLTS nsec NES501 50 50@125°C .95 50 1.0 NES502 75 50@125°C .95 50 1.0 NES503 100 50@125°C .95 50 1.0 NES504 125 50@125°C .95 50 1.0 NES505 150 50@125°C .95 50 1.0

Contextual Info: NEW ENGLAND SEMICONDUCTOR ULTRA-FAST RECTIFIERS If avg AMPS VF @ IF (avg) VOLTS nsec o0 i'c “c/w DO-5 NES501 NES502 NES503 NES504 NES505 NES801 NES802 NES803 50 75 100 125 150 50 100 150 50@125°C 50@125°C 50@125°C 50@125°C 50@125°C 70@100°C 70@100°C

IN5815 Diode

Abstract: IN5815 NES601 NES701 ultrafast rectifiers IN5813
Contextual Info: NEW ENGLAND SEMICONDUCTOR ULTRA-FAST RECTIFIERS PACKAGE DO-5 A ifcj II DO-4 A • TO-3 DEVICE TYPE PIV VOLTS I f avg) AMPS VF @ IF (avg) VOLTS nsec °C/W NES501 NES502 NES503 NES504 NES505 NES801 NES802 NES803 50 75 100 125 150 50 100 150 50@125°C 50@125°C

Contextual Info: Ultra Fast Rectifiers Page 1 of 2 Next Home Package Device Type PIV Volts IF avg Amps VF @ IF (avg) Volts trr ns q JC ° C/W DO-4 1N5812 50 20@100° C 0.9@10A 15 3.0 DO-4 1N5813 75 20@100° C 0.9@10A 15 3.0 DO-4 1N5814 100 20@100° C 0.9@10A 15 3.0 DO-4

ne5504n

Abstract: NE5501 NE5503N Ne5502 NE5504 cmos open collector NE5501N Transistor 5503
Contextual Info: N E5501/5502/5503/5504-N DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATION These high-voltage, high-current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a common m onolithic substrate. All units feature open collector outputs and integral suppression