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    California Eastern Laboratories (CEL) NE5820M53-A

    TRANS P CH 6V 17MA 3 PIN
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    California Eastern Laboratories (CEL) NE58219-T1-A

    RF TRANS NPN 12V 5GHZ 3SMINMOLD
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    NE58219-T1-A Digi-Reel 1
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    California Eastern Laboratories (CEL) NE5820M53-T1-A

    TRANS P CH 6V 17MA 3 PIN
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    Freescale Semiconductor NE5821N

    Electronic Component
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    ComSIT USA NE5821N 6,525
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    NE582 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE582 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NE5820M53-A Renesas Electronics Transistors - Special Purpose, Discrete Semiconductor Products, TRANS P CH 6V 17MA 3 PIN Original PDF
    NE5820M53-T1-A Renesas Electronics Transistors - Special Purpose, Discrete Semiconductor Products, TRANS P CH 6V 17MA 3 PIN Original PDF
    NE58219 California Eastern Laboratories NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Original PDF
    NE58219 NEC Semiconductor Selection Guide Original PDF
    NE58219 NEC NECs NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Original PDF
    NE58219-T1 California Eastern Laboratories NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Original PDF
    NE58219-T1 NEC NPN silicon epitaxial transistor. Original PDF
    NE58219-T1-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR BIPOLAR .9GHZ 3-SMINI Original PDF
    NE582-1N Signetics Hex Universal Driver Original PDF
    NE58230 NEC Semiconductor Selection Guide Original PDF
    NE58233 NEC Semiconductor Selection Guide Original PDF
    NE582N Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NE582N Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    NE582N Signetics Analogue IC Data Manual 1977 Scan PDF

    NE582 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor zo 607

    Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
    Text: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF NE58219 2SC5004 2SC5004 NE58219 NE58219-T1 2SC5004-T1 transistor zo 607 zo 607 MA 2SC5004-T1 NE58219-T1 nec 237 521 02 NE582

    2608 surface mount transistor

    Abstract: A 3760 0549
    Text: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW


    Original     		PDF NE58219 NE58219 2608 surface mount transistor A 3760 0549

    MJE 13905

    Abstract: 2SC5004 NE58219 NE58219-T1 S21E FREE MM 5402 SCHEMATIC f 2630 152.01
    Text: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW


    Original     		PDF NE58219 NE58219 MJE 13905 2SC5004 NE58219-T1 S21E FREE MM 5402 SCHEMATIC f 2630 152.01

    Untitled

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the


    Original     		PDF NE58219 2SC5004 2SC5004 NE58219-A 2SC5004-A NE58219-T1-A 2SC5004-T1-A perfor516

    Untitled

    Abstract: No abstract text available
    Text: PreliminaryData Sheet NE5820M53 R09DS0005EJ0200 Rev.2.00 May 20, 2011 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.


    Original     		PDF NE5820M53 R09DS0005EJ0200 NE5820M53 R9044

    BJT 5240

    Abstract: 13170
    Text: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW


    Original     		PDF NE58219 NE58219 BJT 5240 13170

    2SC5004

    Abstract: NE58219 S21E on 5295 transistor 152.01 23E16
    Text: NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 1.6±0.1


    Original     		PDF NE58219 NE58219 2SC5004 S21E on 5295 transistor 152.01 23E16

    13E12

    Abstract: NE58219
    Text: NONLINEAR MODEL NE58219 SCHEMATIC CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 ADDITIONAL PARAMETERS Parameters NE58219 CCB 0.03e-12 IS 2.3e-16 MJC 0.28 CCE 0.2e-12 BF 100.3 XCJC


    Original     		PDF NE58219 3e-16 5e-11 4e-12 3e-12 6e-12 12e-12 NE58219 03e-12 2e-12 13E12

    infrared application renesas

    Abstract: HS350 marking B8 R09DS0005EJ0100
    Text: PreliminaryData Sheet NE5820M53 R09DS0005EJ0100 Rev.1.00 Jul 9, 2010 P-channel MOS Field Effect Transistor for Impedance Converter of Microphone DESCRIPTION The NE5820M53 is a P-channel silicon MOSFET designed for use as impedance converter for microphone.


    Original     		PDF NE5820M53 R09DS0005EJ0100 NE5820M53 infrared application renesas HS350 marking B8 R09DS0005EJ0100

    23E16

    Abstract: 2SC5004 NE58219 NE58219-T1 S21E 152.01 br 903
    Text: NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 1.6±0.1


    Original     		PDF NE58219 NE58219 3e-12 6e-12 23E16 2SC5004 NE58219-T1 S21E 152.01 br 903

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PDF PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book

    582n

    Abstract: NE582N 75494 NE582-LED NE582 nt transistor transistor ITT
    Text: Sigm etics Interface Display Driver NE582—LED DIGIT DRIVER C O N N E C T IO N D IA G R A M The N E 582 is supplied in a 16-^pin high dissipation d u a l-in-line plastic package. FE A T U RES • Low saturation voltage ty p ic a lly 0.5V fo r m inim u n


    OCR Scan     		PDF NE582â NE582 400mA 16-pin 582n NE582N 75494 NE582-LED nt transistor transistor ITT

    NE582N

    Abstract: 75494 NE582
    Text: NE582-N PIN CONFIGURATION DESCRIPTION The NE582 is a general interface device comprising a high current output transistor and drive circu itry in each of 6 elements. Each output transistor is individually capa­ ble o f sinking 400mA with a typical satura­


    OCR Scan     		PDF NE582-N NE582 400mA 16-pin 100kHz NE582N 75494

    NE582-1N

    Abstract: 75494 NE582 25CC led driver 800 volts
    Text: ANALOG DIVISION MARCH 1982 HEX UNIVERSAL DRIVER NE582-1 P re lim in a r y DESCRIPTION FEATURES The NE582-1 is a general interface device co m p risin g a high current o u tp u t tra n sisto r and drive c irc u itry in each o f 6 elements. Each o u tp u t tra n sisto r is in d ivid u a lly capa­


    OCR Scan     		PDF NE582-1 NE582-1 400mA 16-pin 100kHz NE582 NES82 NE582-1N 75494 25CC led driver 800 volts

    75494

    Abstract: NE582-1N NE582 NE582-1N equivalent
    Text: MARCH 1982 ANALO G DIVISION HEX UNIVERSAL DRIVER NE582-1 P re lim in a r y DESCRIPTION FEATURES The NE582-1 is a general interface device co m p risin g a high current o u tp u t tra n sisto r and drive c irc u itry in each o f 6 elem ents. Each o u tp u t tra n sisto r is in d ivid u a lly capa­


    OCR Scan     		PDF NE582-1 NE582-1 400mA 16-pin 100kHz NE582 75494 NE582-1N NE582-1N equivalent

    LB 124D transistor

    Abstract: TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG
    Text: pages index 2- 3 com petitors cross-reference 4- 9 selection guide 10-13 abridged data 14-24 d iffe re n tia l am plifiers abridged data 25 com parators selection guide 26-27 abridged data 28-31 selection guide 32-35 abridged data 36-39 general industrial


    OCR Scan     		PDF SO-16 LB 124D transistor TAA970 78L12 cj ne553 TBA915 78M06CG signetics Analogue IC 1977 75S208 MLM311P1 78M08CG