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    Rochester Electronics LLC NE5500234-T1-AZ

    RF MOSFET 4.8V SOT89
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    NE550 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE550 Signetics Linear Integrated Circuits 1972 Scan PDF
    NE5500179A NEC SILICON POWER MOS FET Original PDF
    NE5500179A-T1 NEC 4.8 V Operation Silicon RF Power LDMOS FET for 1.9 GHz 1 W Transmission Amplifiers Original PDF
    NE5500179A-T1 NEC 4.8 V operation silicon RF power MOSFET for GSM1800 and GSM1900 transmission amplifiers. Original PDF
    NE5500479A NEC 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS Original PDF
    NE5500479A-T1 NEC 3.5 V Operation Silicon RF Power LDMOS FET for 900 MHz 1 W Transmission Amplifiers Original PDF
    NE5501N Signetics Analogue IC Data Manual 1977 Scan PDF
    NE5502N Signetics Analogue IC Data Manual 1977 Scan PDF
    NE5503N Signetics Analogue IC Data Manual 1977 Scan PDF
    NE5504N Signetics Analogue IC Data Manual 1977 Scan PDF
    NE550A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NE550A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    NE550F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NE550F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    NE550F Signetics Analogue IC Data Manual 1977 Scan PDF
    NE550L Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    NE550L Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    NE550L Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    NE550L Signetics Analogue IC Data Manual 1977 Scan PDF
    NE550N Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    NE550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE5500179A

    Abstract: ldmos nec
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier


    Original     		PDF NE5500179A NE5500179A ldmos nec

    nec 1678

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier


    Original     		PDF NE5500479A NE5500479A nec 1678

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm


    Original     		PDF NE5500179A NE5500179A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate lateral-diffusion


    Original     		PDF NE5500479A NE5500479A

    Untitled

    Abstract: No abstract text available
    Text: NE550G Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage4.5 Max. Adjustable Output Voltage30 Output Voltage Nominal (V)5.0 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)50


    Original     		PDF NE550G Voltage30 StyleTO-91

    Untitled

    Abstract: No abstract text available
    Text: NE550F Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage40 Output Voltage Nominal (V)40 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40


    Original     		PDF NE550F Voltage40 Code14-243 Pins14 NumberLN01400243 /-40V

    GSM1800

    Abstract: GSM1900 NE5500179A NE5500179A-T1
    Text: 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH POWER ADDED EFFICIENCY:


    Original     		PDF GSM1800 NE5500179A GSM1900 24-Hour NE5500179A NE5500179A-T1

    nec 2501

    Abstract: nec RF package SOT89 NE5500134 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet
    Text: DATA SHEET SILICON POWER MOS FET NE5500134 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate


    Original     		PDF NE5500134 NE5500134 OT-89 nec 2501 nec RF package SOT89 nec marking power amplifier NEC MARKING CODE code marking NEC date code marking NEC FET SOT-89 N-Channel HS350 sot89 fet

    Untitled

    Abstract: No abstract text available
    Text: NE550N Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 150m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage40 Output Voltage Nominal (V)40 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40


    Original     		PDF NE550N Voltage40 Code14-243 Pins14 NumberLN01400243 /-40V

    NE5500179A

    Abstract: NE5500179A-T1 VP215
    Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm


    Original     		PDF NE5500179A NE5500179A NE5500179A-T1 VP215

    NE5500234

    Abstract: nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ
    Text: DATA SHEET SILICON POWER MOS FET NE5500234 N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS DESCRIPTION The NE5500234 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for DCS1800 and PCS1900 handsets. Dies are manufactured using our NEWMOS technology our 0.6 m WSi gate


    Original     		PDF NE5500234 DCS1800/PCS1900 NE5500234 DCS1800 PCS1900 OT-89 nec RF package SOT89 nec 2501 marking v2 FRS transceiver NE5500234-T1-AZ

    ne5500479a-t1

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LD-MOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s 0.6 µm WSi gate lateraldiffusion MOS FET and housed in a surface mount package. The device can deliver 31.5 dBm output power with


    Original     		PDF NE5500479A NE5500479A ne5500479a-t1

    NE550L

    Abstract: No abstract text available
    Text: NE550L Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 50m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage40 Output Voltage Nominal (V)40 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40


    Original     		PDF NE550L Voltage40

    NE5500479A

    Abstract: NE5500479A-T1 VP215 ldmos nec
    Text: DATA SHEET SILICON POWER MOS FET NE5500479A 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology our 0.6 µm WSi gate laterally diffused


    Original     		PDF NE5500479A NE5500479A NE5500479A-T1 VP215 ldmos nec

    transistor NEC D 882 p

    Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 618 nec 882 datasheet transistor NEC 882 p NE5500179A NE5500179A-T1 VP215
    Text: DATA SHEET SILICON POWER MOS FET NE5500179A 4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology NEC’s


    Original     		PDF NE5500179A NE5500179A transistor NEC D 882 p nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 618 nec 882 datasheet transistor NEC 882 p NE5500179A-T1 VP215

    Untitled

    Abstract: No abstract text available
    Text: NE550A Linear ICs Adjustable Positive Voltage Regulator status Military/High-RelN Load Current Max. A 3.0m Min. Adjustable Output Voltage1.2 Max. Adjustable Output Voltage37 Output Voltage Nominal (V)19 Drop-Out Volt Max.3.0 P(D) Max. (W)800m Nom. Supp (V)40


    Original     		PDF NE550A Voltage37 Code14-348 Pins14 NumberLN01400348

    NE5500234

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    12/24 v dc-dc converter schematic

    Abstract: Capacitor 0.01 uF GR-1089 GR-63-CORE IEC60950-1 SR-332 TPSC106M025R0500 HDS48T3012-NCB0 UL60950-3RD
    Text: HDS48T30120 DC-DC Converter Data Sheet Half-Brick with 48 VDC Input; 12 VDC @ 30A Output Features • • • • • • • • • • • • • Applications • Power systems utilizing Intermediate Bus Architecture • Networking equipment • Data/voice processing


    Original     		PDF HDS48T30120 00V/100ms HDS48T3012 12/24 v dc-dc converter schematic Capacitor 0.01 uF GR-1089 GR-63-CORE IEC60950-1 SR-332 TPSC106M025R0500 HDS48T3012-NCB0 UL60950-3RD

    L298D

    Abstract: SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E
    Text: AMS-105 GENERAL INFORMATION SEMICONDUCTOR CROSS REFERENCE in Alpha-Numerical Order The suggested Allegro replacement devices are based on similarity as shown in currently published data. Exact replacement in all applications is not guaranteed and the user should compare the specifications of the competitive and recommended Allegro replacement. Special caution must be exercised in attempting to do a reverse cross. In some instances, the competitive device is obsolete; in


    Original     		PDF AMS-105 LX8020" CS2930" CS298" L298D SAS251S4 ugn3013 SAS251 UCN4815A ULN3782M UDN2981LW uc3646 mc1417p CA1725E

    hbc48t25120

    Abstract: TR-332
    Text: HBC48T25120 DC-DC Converter Data Sheet 36-75 VDC Input; 12 VDC @ 25 A Output Features Applications • • • • Telecommunications Data communications Wireless communications Servers, workstations Benefits • Cost-effective, single board design with optional


    Original     		PDF HBC48T25120 TR-332

    NE550

    Abstract: 8t90 SE550 negative floating regulator SE550L
    Text: SE/NE550-F.L.N DESCRIPTION FEATURES The 550 is a precision m onolithic voltage regulator capable of positive or negative supply operation as series, shunt, switching or floating regulator. Guaranteed line regu­ lation is provided for input voltages ranging


    OCR Scan     		PDF SE/NE550-F 100pF NE550 8t90 SE550 negative floating regulator SE550L

    ne550n

    Abstract: NE550 NE550L Signetics SE 540 SE550 ITT Voltage Regulator
    Text: S ig n e tic s integrated Circuits - Voltage Regulator NE550 Precision Adjustable Voltage Regulator G E N E R A L D E S C R IP T IO N T h e 5 5 0 is a p re c is io n m o n o lit h ic v o lta g e re g u la to r ca pa ble o f p o s itiv e o r n e g a tive s u p p ly o p e ra tio n as series, s h u n t,


    OCR Scan     		PDF NE550 ne550n NE550L Signetics SE 540 SE550 ITT Voltage Regulator

    NE550A

    Abstract: NE550-A SE550L NE550
    Text: SE550-L NE550-A, L FEATURES PIN CONFIGURATION • LINE REGULATION GUARANTEED OVER INPUT VOLTAGE RANGE OF B.5 VOLTS TO AS HIGH AS 50 VOLTS. • OUTPUT VOLTAGE CONTINUOUSLY ADJUSTABLE FROM 2 VOLTS TO 40 VOLTS > ,01%LINE AND LOAD REGULATION . ADJUSTABLE LIMITING OF SHORT CIR­


    OCR Scan     		PDF SE550-L NE550-A, 150mA 12BiiA SE550L NE550A NE550-A NE550