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    ND2012 Price and Stock

    TAIYO YUDEN LSCND2012HKTR24MF

    INDUCTOR MULTILAYER 0.24UH 0805
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    DigiKey LSCND2012HKTR24MF Reel 4,000 4,000
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    LSCND2012HKTR24MF Cut Tape 1
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    LSCND2012HKTR24MF Digi-Reel 1
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    Rochester Electronics LLC ND2012L

    SMALL SIGNAL FIELD-EFFECT TRANSI
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    Rochester Electronics LLC ND2012L-TR1

    SMALL SIGNAL N-CHANNEL MOSFET
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    TAIYO YUDEN LSCND2012HKTR47MD

    FIXED IND 0.47 UH 4A 0.026 OHM
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    DigiKey LSCND2012HKTR47MD Reel 4,000
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    Avnet Americas LSCND2012HKTR47MD Reel 6 Weeks 4,000
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    Mouser Electronics LSCND2012HKTR47MD 3,327
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    TAIYO YUDEN LLCND2012HKTR47MD

    FIXED IND 0.47 UH 4A 0.026 OHM
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    DigiKey LLCND2012HKTR47MD Reel 4,000
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    ND2012 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    ND2012L Temic Semiconductors N-Channel Depletion-Mode MOSFET Transistors Original PDF
    ND2012L Vishay Intertechnology N-Channel Depletion-Mode MOSFET Transistor Original PDF
    ND2012L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    ND2012L Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    ND2012L-TR1 Vishay Transistor Mosfet N-CH 200V 0.16A 3TO-226AA T/R Original PDF

    ND2012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN901

    Abstract: ND2012L ND2020 ND2020L 37807
    Text: ND2012L/2020L Siliconix NĆChannel DepletionĆMode MOS Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 -1.5 to -4 0.16 20 -0.5 to -2.5 0.132 200 ND2020L For applications information see AN901. Features


    Original     		PDF ND2012L/2020L ND2012L ND2020L AN901. O226AA) P-37807--Rev. AN901 ND2012L ND2020 ND2020L 37807

    ND2020

    Abstract: ND2012L ND2020L TA 7061
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D


    Original     		PDF ND2012L/2020L ND2012L ND2020L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 ND2020 ND2012L ND2020L TA 7061

    2020L

    Abstract: Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L rDS(on) Max (W) VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications D D D D D D D D D


    Original     		PDF ND2012L/2020L ND2012L ND2020L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 2020L Nd202 ND2012L ND2020 ND2020L N-Channel Depletion-Mode MOSFET

    nd2020

    Abstract: ND2012L ND2020L S-52426 2020L
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


    Original     		PDF ND2012L/2020L ND2012L ND2020L O-226AA 18-Jul-08 nd2020 ND2012L ND2020L S-52426 2020L

    Untitled

    Abstract: No abstract text available
    Text: ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2012L ND2020L VGS(off) (V) ID (A) 12 - 1.5 to - 4 0.16 20 - 0.5 to - 2.5 0.132 200 Features D D D D D rDS(on) Max (O) Benefits High Breakdown Voltage: 220 V


    Original     		PDF ND2012L/2020L ND2012L ND2020L O-226AA 08-Apr-05

    pt100 interface current source multiplexer

    Abstract: pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 pt100 interface current source multiplexer pt100 sensor with adc 4-20mA pt100 sensor interface with microcontroller DN2540 NE43 XTR108EA Voltage to Current Converter dual 4-20mA scheme xtr 110 RTD signal conditioning theory

    Untitled

    Abstract: No abstract text available
    Text: XTR XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108

    N-Channel Depletion-Mode MOSFET

    Abstract: normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet
    Text: AN901 Siliconix DepletionĆMode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction MOSFET may also perform in the enhancementĆmode. The nĆchannel enhancementĆmode MOSFET Figure 1c , requires a positiveĆpolarity gate voltage


    Original     		PDF AN901 ND2012 ND2406 2N692) N-Channel Depletion-Mode MOSFET normal scr operation depletion-mode depletion mode current limiter mosfet vs SCR AN901 mosfet modern applications voltage regulator mosfet 1,2 n channel depletion MOSFET depletion mode mosfet

    N-Channel Depletion-Mode MOSFET

    Abstract: P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion
    Text: AN901 Depletion-Mode MOSFETs Expand Circuit Opportunities Ed Oxner and Richard Bonkowski Introduction A principal advantage of the depletion-mode MOSFET is its ability to perform at higher operating voltages than its JFET counterpart. As a depletion-mode structure, the


    Original     		PDF AN901 ND2012 ND2406 2N692) 21-Jun-94 N-Channel Depletion-Mode MOSFET P-Channel Depletion Mosfets DEPLETION MOSFET depletion mode fet depletion mode mosfet P-Channel Depletion-Mode mosfet depletion n-channel mosfet triggering depletion p mosfet n mosfet depletion

    Voltage to Current Converter dual 4-20mA scheme

    Abstract: pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 Voltage to Current Converter dual 4-20mA scheme pt100 rtd spi UC 493 pt100 multiplexer DN2540 NE43 XTR108EA RTD PT100 temp Vs resistance relationship 4-20ma scheme

    pt100 rtd spi

    Abstract: DN2540 NE43 XTR108 XTR108EA RTD SENSING CIRCUIT 4-20mA pt100 adc microchip depletion-mode MOSFET namur driver 350mV
    Text: XTR108 XTR 108 SBOS187A – OCTOBER 2001 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V ● ELIMINATES POTENTIOMETERS AND


    Original     		PDF XTR108 SBOS187A 4-20mA, 4-20mA SSOP-24 XTR108 pt100 rtd spi DN2540 NE43 XTR108EA RTD SENSING CIRCUIT 4-20mA pt100 adc microchip depletion-mode MOSFET namur driver 350mV

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    Voltage to Current Converter dual 4-20mA scheme

    Abstract: No abstract text available
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 Voltage to Current Converter dual 4-20mA scheme

    Untitled

    Abstract: No abstract text available
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108

    Untitled

    Abstract: No abstract text available
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108

    Resistance characteristic Pt100

    Abstract: RTD PT100 temp Vs resistance relationship 100RTD
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 Resistance characteristic Pt100 RTD PT100 temp Vs resistance relationship 100RTD

    voltage 0-5v to 4-20mA loop converter

    Abstract: Voltage to Current Converter dual 4-20mA scheme pt100 multiplexer pt100 rtd spi XTR108 XTR108EA DN2540 NE43 xtr 110 namur ne43
    Text: XT R XTR108 108 SBOS187C – OCTOBER 2001 – REVISED JULY 2005 4-20mA, TWO-WIRE TRANSMITTER “Smart” Programmable with Signal Conditioning FEATURES DESCRIPTION ● COMPLETE TRANSMITTER + RTD LINEARIZATION ● TWO-WIRE, 4-20mA OUTPUT ● VOLTAGE OUTPUT 0.5V to 4.5V


    Original     		PDF XTR108 SBOS187C 4-20mA, 4-20mA SSOP-24 XTR108 voltage 0-5v to 4-20mA loop converter Voltage to Current Converter dual 4-20mA scheme pt100 multiplexer pt100 rtd spi XTR108EA DN2540 NE43 xtr 110 namur ne43

    mosfet cross reference

    Abstract: bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross
    Text: MOSFET Cross Reference* Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number Industry Part Number Supertex Part Number 2N6660 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G


    Original     		PDF 2N6660 IRFF110 VN2210N2 VN0605T TN2106K1-G ZVN0540A VN0550N3-G 2N6661 mosfet cross reference bs170 replacement VN10KM replacement CROSS REFERENCE 2n6661 BST72A replacement BSN10 "cross reference" BST72A CROSS equivalent of BS250 ZVNL110A cross reference vn10km cross

    ND2020L

    Abstract: No abstract text available
    Text: A flg S ä VDDQ SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDQ1CHP* VDDQ2CHP* ND2012L ND2020L ‘ Meets or exceeds specification for all part numbers listed below 0.038 ro.965; Source Pad For additional design information please consult the typical performance curves VDDQ20.


    OCR Scan     		PDF ND2020L ND2012L VDDQ20. ND2020L

    Untitled

    Abstract: No abstract text available
    Text: Te m ic siiiconix_ ND2012L/2020L N-Channel Depletion-Mode MOS Transistors Product Summary Part Number v BR DSV ND2012L Min (V) r i)S(on) Max (£2) 200 ND2020L Id Vg s (oB) (V) (A) 12 -1.5 to - 4 0.16 20 -0.5 to -2.5 0.132 For applications information see AN901, page 12-46.


    OCR Scan     		PDF ND2012L/2020L ND2012L ND2020L AN901, P-37807--Rev.

    Untitled

    Abstract: No abstract text available
    Text: BlS S & VDDQ20 N-Channel _ Depletion-Mode MOSFET TYPE PACKAGE DEVICE Single TO-92 TO-226AA • ND2012L, ND2020L Single Chip • Available as VDDQ1CHP, VDDQ2CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current vs. Gate-Source Cutoff Voltage


    OCR Scan     		PDF VDDQ20 O-226AA) ND2012L, ND2020L ND2020) VDDQ20 ND2012)

    C-1555

    Abstract: N1230 TO206AC
    Text: SILICONIX INC 18E [I 5554735 0014051 5 ffT 'S ilic o n ix JtmM in c o rp o ra te d ND2012 SERIES 'T - lS l- 'Z S N-Channel Depletion-M ode M OS Transistors BOTTOM VIEW TO-92 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER V BR DSV fDS(ON) (V) (« > Id


    OCR Scan     		PDF ND2012 ND2012L ND2012E O-206AC VDDQ20 1250XL ND2012E. C-1555 N1230 TO206AC

    N-Channel Depletion-Mode MOSFET

    Abstract: TA 7061 52426 ND2020L
    Text: Temic ND2012L/2020L Semiconductors N-Channel Depletion-Mode MOSFET Transistors Product Summary P a rt N um ber V<BR DSV M in V) ND2012L ND2020L 200 Features • • • • • High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Q Low Input and Output Leakage


    OCR Scan     		PDF ND2012L/2020L ND2012L ND2020L O-226AA S-52426--Rev. 14-Apr-97 N-Channel Depletion-Mode MOSFET TA 7061 52426

    ND2020L

    Abstract: No abstract text available
    Text: OfSSS& ND2012L, ND2020L N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BRJDSS rDS(ON (O) •d (A) ND2012L 200 12 0.16 ND2020L 200 20 0.132 3 DRAIN Performance Curves: VDDQ20 3 .I— i— , 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF ND2012L, ND2020L ND2012L VDDQ20 2020L 150ource