17n100a
Abstract: NC2030 17N100AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
N100U1
N100AU1
17N100U1
17N100AU1
17n100a
NC2030
17N100AU1
|
25N100
Abstract: No abstract text available
Text: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25
|
Original
|
PDF
|
N100A
O-204
O-247
25N100g2
25N100
|
10N100U1
Abstract: N100A ixgh 1500
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
N100U1
N100AU1
10N100U1
10N100AU1
10N100U1
N100A
ixgh 1500
|
10N100
Abstract: 10N10 10N100A N100 IC-2520
Text: Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20
|
Original
|
PDF
|
N100A
10N100
10N100A
10N100
10N100A
10N10
N100
IC-2520
|
17N100
Abstract: 17N100A N100 17N100AU1
Text: Low VCE sat High speed IGBT IXGH/IXGM 17 N100 IXGH/IXGM 17 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 34 A IC90
|
Original
|
PDF
|
N100A
17N100
17N100A
O-204AE
17N100
17N100U1
17N100A
N100
17N100AU1
|
10N100A
Abstract: 10N100 N100
Text: VCES Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings 1000 V 20 A 1000 V 20 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25
|
Original
|
PDF
|
N100A
10N100
10N100A
10N100
10N100A
10N100U1
10N100AU1
N100
|
ixsm
Abstract: 25N100 D-68623 25N100A N100
Text: VCES Low VCE sat IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 VCE(sat) 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
N100A
O-247
D-68623
ixsm
25N100
25N100A
N100
|
25N100A
Abstract: .25N100 25N100 N100
Text: Low VCE sat High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90
|
Original
|
PDF
|
N100A
25N100
25N100A
O-204AE
25N100A
.25N100
25N100
N100
|
IXYS 17N100
Abstract: 17N100A 17N100 N100
Text: VCES Low VCE sat IGBT High speed IGBT IXGH/IXGM 17 N100 1000 V 34 A IXGH/IXGM 17 N100A 1000 V 34 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V Maximum Ratings VGES Continuous ±20 V VGEM Transient
|
Original
|
PDF
|
N100A
O-247
17N100
17N100A
O-204AE
17N100
17N100U1
IXYS 17N100
17N100A
N100
|
Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
N100U1
N100AU1
17N100U1
17N100AU1
|
10N100U1
Abstract: RG150
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
N100U1
N100AU1
10N100U1
10N100AU1
10N100U1
RG150
|
transistor ixgh 25N100
Abstract: .25N100 25N100 ixgm IXGH/IXGM 25 N100A 25N100A N100 ixgh 10v C90T IC2550
Text: VCES Low VCE sat High speed IGBT IXGH/IXGM 25 N100 1000 V IXGH/IXGM 25 N100A 1000 V Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V V GES Continuous ±20 V V GEM Transient ±30 V I C25
|
Original
|
PDF
|
N100A
O-204
O-247
25N100g2
transistor ixgh 25N100
.25N100
25N100
ixgm
IXGH/IXGM 25 N100A
25N100A
N100
ixgh 10v
C90T
IC2550
|
ixgh 1500
Abstract: 17N100U1 17N100AU1 AC motor speed control 17n10
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 17 N100U1 IXGH 17 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
|
Original
|
PDF
|
N100U1
N100AU1
17N100AU1
17N100U1
ixgh 1500
17N100U1
17N100AU1
AC motor speed control
17n10
|
5N100
Abstract: 5N100A N100 1000v5a 2NA250
Text: VDSS Standard Power MOSFET ID25 IXTH/IXTM 5 N100 1000 V IXTH/IXTM 5 N100A 1000 V 5A 5A RDS on 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000
|
Original
|
PDF
|
N100A
O-204
O-247
5N100A
O-204AE
5N100
5N100
5N100A
N100
1000v5a
2NA250
|
|
|
IXGH17N100
Abstract: No abstract text available
Text: BIXYS jjjjjB jjj Low VCHH0IGBT High speed IGBT IXGH/IXGM17N100 IXGH/IXGM17 N100A VC E S ^C25 v C E sat 1000 V 1000 V 34 A 34 A 3.5 V 4.0 V « Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 M fi
|
OCR Scan
|
PDF
|
IXGH/IXGM17N100
IXGH/IXGM17
N100A
O-247
IXGH17N100
|
C289
Abstract: IXTM5N100A
Text: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il
|
OCR Scan
|
PDF
|
N100A
O-247
O-204
O-247
C2-88
IXTH5N100
1XTM5N100
C2-89
C289
IXTM5N100A
|
17N10
Abstract: No abstract text available
Text: Low VCE sat IGBT High speed IGBT Symbol Test Conditions VCES VCGn ^ ^ VGES v GEM 'c25 IXGH/IXGM17 N100 IXGH/IXGM17 N100A Maximum Ratings = 25°C to 150°C 1000 V = 25°C to 150°C; RGE = 1 MU 1000 V Continuous ±20 V Transient ±30 V 34 A Tc = 25”C 'c90
|
OCR Scan
|
PDF
|
IXGH/IXGM17
N100A
O-247
O-204
O-247
17N100
17N100U1
17N100AU1
17N10
|
5n100
Abstract: 5N100A
Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM
|
OCR Scan
|
PDF
|
N100A
O-247
O-204
O-204
O-247
4bflb52b
5n100
5N100A
|
2SN100
Abstract: 25N100
Text: VCES Low V CE sat <" W¥V High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A ^C25 1000 V 1000 V v* CE(sat) 50 A 1 3.5 V 50 A 4.0 V G_ Symbol Test C onditions Maximum Ratings V " ces Tj = 25°C to 150°C 1000 V v CGR T j = 25°C to 150°C; RGE = 1 M n 1000
|
OCR Scan
|
PDF
|
N100A
T0-247
T0-204
O-247
2SN100
25N100
|
Untitled
Abstract: No abstract text available
Text: v Low VCE sst High speed IGBT IXGH/IXGM 25 N100 IXGH/IXGM 25 N100A « Symbol Test Conditions vCES Tj = 25°C to 150°C 1000 V V cG R ^ 1000 V V GES Maximum Ratings = 25°C to 150°C; RGE = 1 Mi2 v Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C 50 A ^C90
|
OCR Scan
|
PDF
|
N100A
O-247
T0-204
4bflb22b
25N100
25N100A
|
25N100A
Abstract: No abstract text available
Text: nixYS Lo w Vce mi ig b t High Speed IGBT IXSH/IXSM25N100 IXSH/IXSM 25 N100A v* C E S ^C 25 vv C E (s a t) 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Test Conditions Maximum Ratings VCES Tj - 25°C to 150°C 1000 V v CGR v GES v GEM T, = 25°C to 150°C; RGE = 1 MQ
|
OCR Scan
|
PDF
|
IXSH/IXSM25N100
N100A
O-247
O-204
2SN100
25N100A
25N100
25N100A
|
2N100
Abstract: C285 IXTP2N100A
Text: ItilXYS IXTA/fXTP 2 N100 IXTA/IXTP 2 N100A VDSS ^D25 1000 V 1000 V 2A 2A p DS on 7.0 Û 6.0 ß N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VOSS Tj = 25°C to 150°C 1000 V V Tj = 25°C to 150°C; RGS= 1 M fi 1000 V Vos VGSM Continuous
|
OCR Scan
|
PDF
|
N100A
O-220
O-263
2N100
2N100A
2N100A
C2-85
C285
IXTP2N100A
|
Untitled
Abstract: No abstract text available
Text: OIXYS l«»v .laBT IXSH/IXSM 25 N100 IXSH/IXSM 25 N100A High Speed IGBT V* C E S ^C25 V * CE sat 1000 V 1000 V 50 A 50 A 3.5 V 4.0 V Short Circuit SOA Capability Sym bol T est C o n dition s M axim um R atings v CES T j = 25°C to 150°C 1000 V V CGR T j = 25°C to 150°C; RGE = 1 M il
|
OCR Scan
|
PDF
|
N100A
25N100
25N1OOA
|
Untitled
Abstract: No abstract text available
Text: OIXYS V CES Low VCE ,i(| IGBT High Speed IGBT IXGH 12 N100 IXGH 12 N100A e _ Symbol Test Conditions VCES Tj = $ Maximum Ratings 25°C to 150°C 1000 v CGR Tj = 25°C to 150°C; RGE = 1 MQ 1000 V Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 24 A
|
OCR Scan
|
PDF
|
N100A
O-247
-247S
|
