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TE Connectivity SMW511RJT RES SMD 11 OHM 5% 5W 5329
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMW511RJT	Digi-Reel	4,187		1	1 $1.76 10 $1.027 100 $0.6324 1000 $0.53032 10000 $0.53032	Buy Now
	SMW511RJT	Cut Tape	4,187		1	1 $1.76 10 $1.027 100 $0.6324 1000 $0.53032 10000 $0.53032	Buy Now
	SMW511RJT	Reel	3,500		500	1 - 10 - 100 - 1000 $0.41509 10000 $0.38779	Buy Now
Avnet Americas	SMW511RJT	Reel		23 Weeks, 4 Days	1,000	1 - 10 - 100 - 1000 $0.38024 10000 $0.36672	Buy Now
Mouser Electronics	SMW511RJT		1,260			1 $1.26 10 $0.728 100 $0.633 1000 $0.388 10000 $0.387	Buy Now
Newark	SMW511RJT	Reel			1,000	1 - 10 - 100 - 1000 $0.5 10000 $0.444	Buy Now
Avnet Abacus	SMW511RJT			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	SMW511RJT					1 - 10 - 100 - 1000 $0.463 10000 $0.3919	Buy Now
TE Connectivity SMW5110RJT RES SMD 110 OHM 5% 5W 5329
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMW5110RJT	Digi-Reel	815		1	1 $1.76 10 $1.027 100 $0.6324 1000 $0.53032 10000 $0.53032	Buy Now
	SMW5110RJT	Cut Tape	815		1	1 $1.76 10 $1.027 100 $0.6324 1000 $0.53032 10000 $0.53032	Buy Now
	SMW5110RJT	Reel	500		500	1 - 10 - 100 - 1000 $0.41509 10000 $0.38779	Buy Now
Avnet Americas	SMW5110RJT	Reel		23 Weeks, 4 Days	1,000	1 - 10 - 100 - 1000 $0.36074 10000 $0.34746	Buy Now
Mouser Electronics	SMW5110RJT		880			1 $1.1 10 $0.728 100 $0.633 1000 $0.387 10000 $0.387	Buy Now
Newark	SMW5110RJT	Reel			1,000	1 - 10 - 100 - 1000 $0.5 10000 $0.444	Buy Now
Avnet Abacus	SMW5110RJT			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Master Electronics	SMW5110RJT					1 - 10 - 100 - 1000 $0.463 10000 $0.3919	Buy Now
Black Box Corporation RMW5110AC-R2 Climatecab Wallmount Cab Double Hinge, 800 Btu Ac \|Black Box RMW5110AC-R2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RMW5110AC-R2	Bulk			1	1 $3805.59 10 $3615.31 100 $3615.31 1000 $3615.31 10000 $3615.31	Buy Now
Black Box Corporation RMW5110ACG-W3 3 Year Warranty For Rmw5110Acg \|Black Box RMW5110ACG-W3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RMW5110ACG-W3	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Black Box Corporation RMW5110ACG-R2 Climatecab Wallmount Cab Dblhinge,800Btu, gland Pl \|Black Box RMW5110ACG-R2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	RMW5110ACG-R2	Bulk			1	1 $5929.99 10 $5633.49 100 $5633.49 1000 $5633.49 10000 $5633.49	Buy Now

MW511 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MW511		Micronetics Wireless	VCO FOR WCDMA APPLICATIONS		Original	PDF

MW511 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MW500 Abstract: MW511 Text: MW511 VCOS FOR WCDMA APPLICATIONS SPECIFICATIONS Frequency Range: 2162 MHz @ 0.3V 2255 MHz @ 2.7V Phase Noise: @10 kHz: ≤-97 dBc/Hz @100 kHz: ≤-117 dBc/Hz Tuning Sensitivity: ≥40 MHz/V Spurious Response 2nd Harmonics : ≤-10 dBc Output Power: 9±3 dBm	Original	MW511 MW500	PDF
TIM7785-16 Abstract: fet toshiba Text: TOSHIBA TIM7785-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package	Original	TIM7785-16 2-16G1B) MW51110196 TIM7785-16 fet toshiba	PDF
TIM7785-14L Abstract: No abstract text available Text: TOSHIBA TIM7785-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.7 GHz to 8.5 GHz	Original	TIM7785-14L 2-16G1B) MW51100196 TIM7785-14L	PDF
TIM7785-16L Abstract: No abstract text available Text: TOSHIBA TIM7785-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz	Original	TIM7785-16L 2-16G1B) MW51120196 TIM7785-16L	PDF
TIM8596-4 Abstract: No abstract text available Text: TOSHIBA TIM8596-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package	Original	TIM8596-4 MW51180196 TIM8596-4	PDF
TIM7984-30L Abstract: No abstract text available Text: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45.0 dBm at 7.9 GHz to 8.4 GHz	Original	TIM7984-30L Pow25° 2-16G1B) MW51160196 TIM7984-30L	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TIM7785-16SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz	Original	TIM7785-16SL 2-16G1B) MW51130196 TIM7785-16SL	PDF
TIM8596-2 Abstract: toshiba fet Text: TOSHIBA TIM8596-2 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P1dB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package	Original	TIM8596-2 MW51120196 TIM8596-2 toshiba fet	PDF
TIM7785-30L Abstract: No abstract text available Text: TOSHIBA TIM7785-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 44.5 dBm at 7.7 GHz to 8.5 GHz	Original	TIM7785-30L 2-16G1B) MW51140196 TIM7785-30L	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 3 1 .5 d B m , Single Carrier Level • High po w e r	OCR Scan	TIM7785-16SL MW51130196 TIM7785-16SL	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7984-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45.0 d B m at 7.9 G H z to 8 .4 G H z	OCR Scan	TIM7984-30L 2-16G1B) MW51160196	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TIM7984-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power * pidB = 45.0 dBm at 7.9 G H z to 8.4 GHz	OCR Scan	TIM7984-30L 2-16G1B) MW51160196 DD5271D ltH7250	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz	OCR Scan	TIM7785-30L TIM7785-30L MW51140196 DD22b3D	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • L o w in te rm o d u la tio n d is to rtio n - IM 3 = -4 2 d B c a t Po = 3 1 .5 d B m , - S in g le c a r rie r le ve l • H ig h p o w e r	OCR Scan	TIM7785-16L MW51120196 TIM7785-16L	PDF

Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.7 GHz to 8.5 GHz	OCR Scan	7785-16L	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-\|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	TIM8596-8 2-11C1B) MW51190196 1EH725D	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-16SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, Single Carrier Level • High power - P1dB = 42.5 dBm at 7.7 GHz to 8.5 GHz	OCR Scan	TIM7785-16SL TIM7785-16SL MW51130196	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PldB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G idB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	TIM8596-2 MW51120196 002271b TIM8596-2	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-4 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - P-idB = 36.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	TIM8596-4 MW51180196 G0S272G	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-8 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 39.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 6.0 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	TIM8596-8 CharM8596-8 2-11C1B) MW51190196	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA TIM7984-14L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -43 d B c a t Po = 3 1 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 42.0 d B m at 7.9 G H z to 8 .4 G H z	OCR Scan	TIM7984-14L 2-16G1B) MW51150196 TIM7984-141Power	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM3 = -43 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P -ld B = 4 4 .5 d B m at 7.7 G H z to 8 .5 G H z	OCR Scan	TIM7785-30L MW51140196 TIM7785-30L	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-14L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 41 '5 dBm at 7.7 GHz to 8.5 GHz	OCR Scan	TIM7785-14L MW51100196	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM8596-2 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 33.5 dBm at 8.5 GHz to 9.6 GHz • High gain - G1dB = 7.5 dB at 8.5 GHz to 9.6 GHz • Broadband internally matched • Hermetically sealed package	OCR Scan	TIM8596-2 MW51120196 TIM8596-2	PDF

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MW511 Datasheets (1)

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MW500

TIM7785-16

TIM7785-14L

TIM7785-16L

TIM8596-4

TIM7984-30L

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TIM8596-2

TIM7785-30L

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