DCS-1800
Abstract: GSM-900 MW400 Micronetics Wireless vco 900 1800 mhz GSM part number
Text: NEW! VCOS FOR THE REALWORLD The new MW400 Series is one of Micronetics Wireless smallest, most versatile, and low cost commercial VCO families. At .315”x .236”x .075”, the MW400 is ideal for use in handsets, as well as in mobile radios and subscriber units
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MW400
GSM-900
DCS-1800
DCS-1800
GSM-900
Micronetics Wireless
vco 900 1800 mhz GSM part number
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50hz to 60hz converter circuit diagram
Abstract: MIL-STD-1299 3 phase bridge rectifier 400HZ 60hz to 50hz converter circuit diagram DDME-24H7S-J martek power MIL-STD-129 MILSTD704A 115 vac SINGLE phase bridge rectifier dc-dc converter 380V
Text: MW400S 400 Watts Output Power ACTIVE POWER FACTOR CORRECTION & ISOLATED DC OUTPUT MODULE HOW TO ORDER MW FEATURES 400 - S • Meets Harmonic Requirements of MIL - STD - 1399 • Meets CE101 and CE102 of MIL - STD - 461 No external filter required • Meets all requirements of MIL - STD - 704E
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MW400S
115Vin
400Hz
230Vin
28Vout,
50hz to 60hz converter circuit diagram
MIL-STD-1299
3 phase bridge rectifier 400HZ
60hz to 50hz converter circuit diagram
DDME-24H7S-J
martek power
MIL-STD-129
MILSTD704A
115 vac SINGLE phase bridge rectifier
dc-dc converter 380V
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50hz to 60hz converter circuit diagram
Abstract: No abstract text available
Text: www.martekpower.com MW400S 400 Watts Output Power ACTIVE POWER FACTOR CORRECTION & ISOLATED DC OUTPUT MODULE HOW TO ORDER MW FEATURES 400 - S M / 28 - I Series I - M3 inserts Total Output Power W Single Output Unscreened (I) or Screened(M) Output Voltage
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MW400S
115Vin
400Hz
230Vin
28Vout,
50hz to 60hz converter circuit diagram
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Untitled
Abstract: No abstract text available
Text: www.martekpower.com TABLE OF CONTENTS MW400S SINGLE PHASE, UNIVERSAL AC INPUT . 2 400 watts active power factor correction and isolated DC Output module PERFORMANCE CHARACTERISTICS . 5
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MW400S
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TPM2323-30
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 2.3 GHz • High gain - G1dB = 11.5 dB at 2.3 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2323-30
2-16G1B)
MW40040196
TPM2323-30
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toshiba fet
Abstract: TPM2626-14
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P1dB = 42.0 dBm at 2.6 GHz • High gain - G1dB = 12.0 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2626-14
2-11D1B)
MW40050196
TPM2626-14
toshiba fet
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MW400
Abstract: MW412
Text: MW412 VCOS FOR EGSM APPLICATIONS SPECIFICATIONS Frequency Range: 668 MHz @ 1V 703 MHz @ 4V Tuning Sensitivity: <1.5:1 MHz/V Supply Voltage: +5V Phase Noise: @200 kHz: ≤-125 dBc/Hz @400 kHz: ≤-135 dBc/Hz Supply Current: <20 mA Harmonic Suppression: -20 dBc
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MW412
MW400
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MW419
Abstract: MW400
Text: MW419 VCOS FOR CORDLESS APPLICATIONS SPECIFICATIONS Frequency Range: 1662 MHz @ 1V 1742 MHz @ 4V Phase Noise: @10 kHz: ≤ -95 dBc/Hz @100 kHz: ≤ -115 dBc/Hz Tuning Sensitivity: ≥ 26.7 MHz/V Spurious Response 2nd Harmonics : -20 dBm Output Power: 7 ± 3 dBm
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MW419
MW400
03-883-2V
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PDTA144E
Abstract: lqfp-176 pcb LAYOUT VARTA L2 400 max1909 915gm c838 transistor transistor C730 foxconn transistor c708 transistor C715 Transistor HA17
Text: 1 A B C 2 3 4 5 6 7 8 Schematics Page Index Title / Revision / Change Date Page Title of Schematics Page Title of Schematics Page Rev. Date Page 01 Title 0.2 050523 26 SCREW HOLE & PAD 02 BLOCK DIAGRAM 0.2 050523 27 MINI-PCI 03 Dothan(HOST BUS) 1/2 0.2 050523 28 LAN (82562ET)
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82562ET)
CK-410M)
KB3910
NV44M)
47ohm.
56ohm
MS03-1-01
PDTA144E
lqfp-176 pcb LAYOUT
VARTA L2 400
max1909 915gm
c838 transistor
transistor C730
foxconn
transistor c708
transistor C715
Transistor HA17
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Untitled
Abstract: No abstract text available
Text: MW40F series 40 Watt Medical Grade AC Adapter 5.0" [127.0 mm] 3.0" [76.2 mm] 1.30" [33.0 mm] Features Electrical Specifications Wide range AC input Fully regulated output High efficiency Medical grade approval Also available in white 5 year warranty RoHS Compliant
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MW40F
20MHz
1-M90
EN60601-1-2
115VAC
MW4009-760F-NC-BK
MW4012-760F-NC-BK
MW4015-760F-NC-BK
MW4018-760F-NC-BK
MW4024-760F-NC-BK
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MW400
Abstract: MW403
Text: MW403 VCOS FOR PCS TX APPLICATIONS SPECIFICATIONS Frequency Range: 1850 MHz @ .50V 1910 MHz @ 2.5V Tuning Sensitivity: <1.5:1 MHz/V Supply Voltage: +3V Phase Noise: @10 kHz: ≤-95 dBc/Hz @400 kHz: ≤-125 dBc/Hz Supply Current: <10 mA Harmonic Suppression:
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MW403
MW400
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MW400
Abstract: MW405
Text: MW405 VCOS FOR PHS APPLICATIONS SPECIFICATIONS Frequency Range: 1160 MHz @ .50V 1185 MHz @ 2.5V Phase Noise: @10 kHz: ≤-96 dBc/Hz @400 kHz: ≤-128 dBc/Hz Tuning Sensitivity: ≥12.5 MHz/V Spurious Response 2nd Harmonics : ≤20 dBc Output Power: 0±3 dBm
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MW405
MW400
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MW400
Abstract: MW406
Text: MW406 VCOS FOR PHS APPLICATIONS SPECIFICATIONS Frequency Range: 890 MHz @ .50V 915 MHz @ 2.5V Phase Noise: @10 kHz: ≤-98 dBc/Hz @400 kHz: ≤-130 dBc/Hz Tuning Sensitivity: ≥12.5 MHz/V Spurious Response 2nd Harmonics : ≤-10 dBc Output Power: 1±3 dBm
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MW406
MW400
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MW400
Abstract: MW407
Text: MW407 VCOS FOR GSM APPLICATIONS SPECIFICATIONS Frequency Range: 806 MHz @ .50V 825 MHz @ 2.5V Phase Noise: @25 kHz: ≤-108 dBc/Hz @600 kHz: ≤-132 Dbc/Hz Tuning Sensitivity: ≥ 9.5 MHz/V Spurious Response 2nd Harmonics : ≤-20 dBc Output Power: 7±2 dBm
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MW407
MW400
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CISPR-11
Abstract: din 4148 EN60601-1 MWB100 DIN 8 plug MW1212-760-NC-BK dc plug CISPR11
Text: 952-2012.qxp:QuarkCatalogTempNew 8/29/12 1:22 PM Page 952 Medical and ITE Desktop Power Supplies MW12: 12 Watt Medical Desktop Power Supply RoHS Specifications: ᭤ Floating Output ᭤ 5-Year Limited Warranty ᭤ Approvals: EN60601-1, Class II, CISPR11 ᭤ 100-240 VAC, 47-63 Hz Universal Input
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EN60601-1,
CISPR11
MWA100/MWB100:
MWA100
EN60950-1,
CISPR22
FWC5012-760F
FWC5018-760F
FWC5024-760F
CISPR-11
din 4148
EN60601-1
MWB100
DIN 8 plug
MW1212-760-NC-BK
dc plug
CISPR11
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TPM1818-30 MICROWAVE POWER GaAs FET High Power GaAs FETs L, S-Band Features • High power • P-idB = 44.5 dBm at 1.8 GHz • High gain - G idB = 12 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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TPM1818-30
2-16G1B)
MW40020196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 • High gain dBm at 2.6 GHz - G idB = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2626-14
MW40050196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.3 GHz • High gain - G idB = 11.5 dB at 2.3 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2323-30
MW40040196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 dBm at 2.6 GHz • High gain - G-icb = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2626-14
MW40050196
TPM2626-14
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.6 GHz • High gain - G-idB = 11.5 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2626-30
MW40060196
TPM2626-30
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 1.8 GHz • High gain - G-idB = 12 dB at 1.8 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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TPM1818-30
2-16G1B)
MW40020196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.3 GHz • High gain - G-idB = 11.5 dB at 2.3 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2323-30
MW40040196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM1818-14 High Power GaAs FETs L, S-Band Features • High power " P-idB = 42.0 • High gain dBm at 1.8 G H Z - G idB = 14.0 dB at 1.8 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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TPM1818-14
2-11D1B)
MW40010196
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u432
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs L, S-Band Features • High power " P-ldB = 4 4 .5 d B m a t 2 3 G H z • High gain - G i dB = 11.5 dB at 2.3 G H z • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)
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TPM2323-30
TPM2323-30
MW40040196
u432
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