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    8N35

    Abstract: 72SM AN569 MTH8N35 MTH8N40 MTM8N35 MTM8N40 TMOS 8IM40 MTH8
    Text: MOTOROLA SC IM E D I XST R S/R F t.3b?aS4 OOfiTötiM 4 | MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MTH8INI35 MTH8N40 MTM8N35 MTM8N40 Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS Th ese TM O S Pow er FE T s are designed for high voltage, high


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    PDF b3b72S4 MTH8N35 MTH8N40 MTM8N35 MTM8N40 O-29UA O-218AC YI4SH1962. 8N35 72SM AN569 MTM8N40 TMOS 8IM40 MTH8