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    MT49H16M18 Search Results

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    MT49H16M18 Price and Stock

    Micron Technology Inc MT49H16M18SJ-25:B

    IC DRAM 288MBIT PARALLEL 144FBGA
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    DigiKey MT49H16M18SJ-25:B Tray
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    Avnet Americas MT49H16M18SJ-25:B Tray 12 Weeks 1,120
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    Mouser Electronics MT49H16M18SJ-25:B
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    Newark MT49H16M18SJ-25:B Bulk 1,120
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    Avnet Silica MT49H16M18SJ-25:B 13 Weeks 1,120
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    Micron Technology Inc MT49H16M18BM-18:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H16M18CBM-25:B

    IC DRAM 288MBIT PARALLEL 144UBGA
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    Micron Technology Inc MT49H16M18BM-33 TR

    IC DRAM 288MBIT PARALLEL 144UBGA
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    DigiKey MT49H16M18BM-33 TR Reel 1,000
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    Micron Technology Inc MT49H16M18CSJ-25:B

    IC DRAM 288MBIT PARALLEL 144FBGA
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    Find more MT49H16M18 price and stock on Findchips.com

    MT49H16M18 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MT49H16M18 Micron 288Mb CIO Reduced Latency Original PDF
    MT49H16M18BM-18:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 1.875NS UBGA Original PDF
    MT49H16M18BM-25 Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18BM-25:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18BM-25:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS 144UBGA Original PDF
    MT49H16M18BM-25:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H16M18BM-25IT Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H16M18BM-25IT Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 2.5NS UBGA Original PDF
    MT49H16M18BM-25 IT:B Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18BM-25 IT:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18BM-33 Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18BM-33 Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS 144UBGA Original PDF
    MT49H16M18BM-33 Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS 144UBGA Original PDF
    MT49H16M18BM-33:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS UBGA Original PDF
    MT49H16M18BM-33:B Micron Technology Memory, Integrated Circuits (ICs), IC RLDRAM 288MBIT 3.3NS UBGA Original PDF
    MT49H16M18BM-33 TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18BM-5 Micron 288Mb RLDRAM Component Original PDF
    MT49H16M18BM-5:B Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18BM-5:B TR Micron Technology Integrated Circuits (ICs) - Memory - IC DRAM 288M PARALLEL 144UBGA Original PDF
    MT49H16M18C Micron 288Mb SIO REDUCED LATENCY(RLDRAM II) Original PDF

    MT49H16M18 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MICRON BGA PART MARKING

    Abstract: No abstract text available
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM 2 Features CIO RLDRAM 2 MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING

    09005aef809f284b

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9‡ Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb MT49H8M36 MT49H16M18 09005aef80a41b46/zip: 09005aef809f284b

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C MT49H16M18C

    MICRON BGA PART MARKING

    Abstract: NF 034 T6N 700 MT49H16M18
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b46/Source: 09005aef809f284b MICRON BGA PART MARKING NF 034 T6N 700 MT49H16M18

    15READ

    Abstract: marking ba5 MT49H8M18C MT49H16M18C
    Text: 288Mb: 16 Meg x 18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features 288Mb SIO Reduced Latency RLDRAM II MT49H16M18C For the latest data sheet, refer to Micron’s Web site: www.micron.com/rldram Features Figure 1: • 400 MHz DDR operation (800 Mb/s/pin data rate)


    Original     		PDF 288Mb: 288Mb MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 MT49H8M18C 15READ marking ba5 MT49H16M18C

    smd dk qk

    Abstract: SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C smd dk qk SMD MARKING CODE ACY smd marking codes BA5 smd marking codes BA2 RLDRAM

    MT49H16M18C

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H8M18C MT49H16M18C

    MT49H16M18

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 MT49H16M18

    MT49H16M18C

    Abstract: No abstract text available
    Text: 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization • 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb 09005aef80a41b59/zip: 09005aef811ba111 MT49H8M18C MT49H16M18C

    RLDRAM

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM 2 Features SIO RLDRAM 2 MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron RLDRAM MT49H16M18C

    MT49H16M18

    Abstract: No abstract text available
    Text: 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb 09005aef80a41b46/zip: 09005aef809f284b MT49H8M36 MT49H16M18

    marking code a02 SMD Transistor

    Abstract: transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb MT49H8M36 MT49H16M18 MT49H32M9 144-Ball 288Mb MT49H8M36 marking code a02 SMD Transistor transistor SMD DK MT49H16M18 smd transistor marking d1c Diode A3X transistor smd marking BA RE marking BAX smd cod plastic BA5 marking code A22 SMD MARKING CODE

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Options1 • 533 MHz DDR operation 1.067 Gb/s/pin data rate • 38.4 Gb/s peak bandwidth (x36 at 533 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 2003Micron MT49H16M18C

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb MT49H8M36 MT49H16M18

    MT49H16M18C

    Abstract: No abstract text available
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron MT49H16M18C

    RLDRAM mt49h

    Abstract: MT49H16M18C
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 14.4 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef80a41b59/Source: 09005aef811ba111 288Mb RLDRAM mt49h MT49H16M18C

    plastic BA7 marking code

    Abstract: No abstract text available
    Text: ADVANCE‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288Mb CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288Mb 288Mb output0006, MT49H8M36 plastic BA7 marking code

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb MT49H8M36 MT49H16M18

    SMD d1c

    Abstract: SMD MARKING CODE ACY qkx capacitor smd codes marking A21 MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C SMD d1c SMD MARKING CODE ACY qkx capacitor smd codes marking A21

    smd transistor marking HT1

    Abstract: MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08
    Text: 288Mb: x18 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II Features SIO RLDRAM II MT49H16M18C – 16 Meg x 18 x 8 banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate • 28.8 Gb/s peak bandwidth (x18 at 400 MHz clock frequency) • Organization


    Original     		PDF 288Mb: MT49H16M18C 09005aef815b2df8/Source: 09005aef811ba111 2003Micron smd transistor marking HT1 MT49H16M18C MICRON BGA PART MARKING RLDRAM smd MARKING dk transistor SMD DK rc A202 A212 A221 TN-00-08

    MT49H16M18

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 8 MEG x 36, 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II 288MB CIO REDUCED LATENCY RLDRAM II MT49H8M36 MT49H16M18 MT49H32M9 Features Figure 1: 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization


    Original     		PDF 288MB 288Mb 09005aef809f284b MT49H8M36 MT49H16M18

    smd marking codes BA5

    Abstract: MT49H16M18C
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball FBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb MT49H16M18C smd marking codes BA5

    MICRON BGA PART MARKING

    Abstract: MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h
    Text: 288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II Features CIO RLDRAM II MT49H32M9 – 32 Meg x 9 x 8 Banks MT49H16M18 – 16 Meg x 18 x 8 Banks MT49H8M36 – 8 Meg x 36 x 8 Banks Features Figure 1: • 400 MHz DDR operation 800 Mb/s/pin data rate


    Original     		PDF 288Mb: MT49H32M9 MT49H16M18 MT49H8M36 09005aef80a41b59/Source: 09005aef809f284b MICRON BGA PART MARKING MT49H16M18 smd transistor marking HT1 A191 A201 MT49H32M9 MT49H8M36 RLDRAM mt49h

    MT49H16M18C

    Abstract: No abstract text available
    Text: ADVANCE‡ 16 MEG x 18, 32 MEG x 9 2.5V VEXT, 1.8V VDD, HSTL, SIO, RLDRAM II 288Mb SIO REDUCED LATENCY RLDRAM II MT49H16M18C MT49H32M9C FEATURES Figure 1 144-Ball µBGA • 288Mb • 400 MHz DDR operation (800 Mb/s/pin data rate) • Organization - 16 Meg x 18, 32 Meg x 9 Separate I/O


    Original     		PDF 288Mb 288Mb clo68-3900 MT49H16M18C