Untitled
Abstract: No abstract text available
Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS 2 5 3 4 fS6 1. Collector1 C1 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)
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MT6L11FS
MT3S11FS
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Untitled
Abstract: No abstract text available
Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS Maximum Ratings Ta = 25°C CHARACTERISTICS SYMBOL RATING Q1 Q2 VCBO 13
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MT6L77FS
MT3S11FS
MT3S106FS
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage
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MT6L78FS
MT3S11FS
MT3S11AFS
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Untitled
Abstract: No abstract text available
Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO
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MT6L11FS
MT3S11T
MT3S11FS)
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MT6L77FS
Abstract: No abstract text available
Text: MT6L77FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L77FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit: mm 1.0±0.05 0.8±0.05 MT3S11FS MT3S106FS 2 5 3 4 0.1±0.05 Q2 6 +0.02 Three-pin fSM mold products are corresponded
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MT6L77FS
MT3S11FS
MT3S106FS
MT6L77FS
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Untitled
Abstract: No abstract text available
Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage
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MT6L68FS
MT3S06T
MT3S06FS)
MT3S11T
MT3S11FS)
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MT3S11FS
Abstract: No abstract text available
Text: MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mm 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 Superior performance in oscillator applications. Superior noise characteristics :NF = 2.4 dB, |S21e|2 = 3.5 dB f =2GHz 0.35±0.05
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MT3S11FS
MT3S11FS
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MT3S07FS
Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05
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MT6L63FS
MT3S11FS)
MT3S11T
MT3S07FS)
MT3S07T
MT3S07FS
MT3S07T
MT3S11FS
MT3S11T
MT6L63FS
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MT3S07FS
Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05
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MT6L63FS
MT3S11FS)
MT3S11T
MT3S07FS)
MT3S07T
MT3S07FS
MT3S07T
MT3S11FS
MT3S11T
MT6L63FS
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO 13 13 V Collector-emitter voltage
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MT6L78FS
MT3S11FS
MT3S11AFS
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MT3S11FS
Abstract: No abstract text available
Text: MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mm • 1 3 2 0.1±0.05 +0.02 Lead Pb -free. 0.8±0.05 1.0±0.05 0.48 -0.04 • Superior performance in oscillator applications. Superior noise characteristics 2 :NF = 2.4 dB, |S21e| = 3.5 dB (f =2GHz)
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MT3S11FS
MT3S11FS
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MT3S11FS
Abstract: MT6L78FS
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS 6 2 5 3 4 +0.02 Corresponding three-pin products: Q1 1 0.48 -0.04 Mounted Devices
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MT6L78FS
MT3S11AFS
MT3S11FS
MT3S11FS
MT6L78FS
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200E-02
Abstract: MT3S11FS
Text: MT3S11FS SPICE parameters UCB SPICE 2G6 20031112 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S11FS 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0 8 0
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MT3S11FS
MT3S11FS
01E-07
92E-11
91E-14
77E-14
200E-02
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Untitled
Abstract: No abstract text available
Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04
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MT6L11FS
MT3S11T
MT3S11FS)
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Untitled
Abstract: No abstract text available
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol
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MT6L63FS
MT3S07T
MT3S07FS)
MT3S11T
MT3S11FS)
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MT3S11FS
Abstract: No abstract text available
Text: MT3S11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11FS Unit: mm Superior performance in oscillator applications. Superior noise characteristics :NF = 2.4dB, |S21e|2 = 3.5dB f = 2 GHz 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 0.6±0.05
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MT3S11FS
MT3S11FS
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MT3S11FS
Abstract: 01005
Text: MT3S11FS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S11FS 単位: mm OSC 用途に優れています。 • 低位相雑音タイプです。 • 電流依存性に非常に良い。 : NF = 2.4 dB⎪S21e⎪2 = 3.5 dB f = 2 GHz
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MT3S11FS
dBS21e2
MT3S11FS
01005
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products 6 2 5 3 4 +0.02 Corresponding three-pin products: 1 0.48 -0.04 Mounted Devices Q1 Q2 MT3S11FS
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MT6L78FS
MT3S11FS
MT3S11AFS
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Untitled
Abstract: No abstract text available
Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)
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MT6L63FS
MT3S07T
MT3S07FS)
MT3S11T
MT3S11FS)
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PDF
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Untitled
Abstract: No abstract text available
Text: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications Lead Pb -free.
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MT6L78FS
MT3S11FS
MT3S11AFS
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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IGBT GT30F124
Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ
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SCJ0004R
SC-43)
2SC1815
2SC732TM
2SC1959
2SA1015
2SC2240
2SA970
2SC1815
2SA1015
IGBT GT30F124
IGBT GT30J124
GT30F124
GT30J124
GT50N322
tk25e06k3
TPCP8R01
TK12A10K3
GT30G124
2SK3075
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RFM70U12D
Abstract: 2SC3136 rfm03u3ct 2SK709 RFM70U12 MT3S106 MT3S111 MT3S111P tim4450 tpm1919
Text: 東芝半導体製品総覧表 2009 年 7 月版 高周波デバイス 高周波バイポーラ小信号トランジスタ 高周波小信号 FET 高周波パワーMOSFET 高周波バイポーラパワートランジスタ 高周波ダイオード 小信号 MMIC 高周波セルパック
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SCJ0004N
2SC2714
2SC2715
2SC2716
2SC3123
2SC5064
2SC5084
2SC5089
2SC5094
2SC5106
RFM70U12D
2SC3136
rfm03u3ct
2SK709
RFM70U12
MT3S106
MT3S111
MT3S111P
tim4450
tpm1919
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JDV2S31CT
Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。
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BCJ0003F
BCJ0003E
JDV2S31CT
1SV283B
1SV271
2SK1875
2sk3476
1SV128
1SV307
1SV308
DCS1800
IMT-2000
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