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    MSA1022 Search Results

    MSA1022 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MSA1022 E-Tech Electronics PNP RF Amplifier Transistor Surface Mount Original PDF
    MSA1022-CT1 E-Tech Electronics PNP RF Amplifier Transistor Surface Mount Original PDF
    MSA1022-CT1 Leshan Radio Company 30 V, PNP RF amplifier transistor surface mount Original PDF
    MSA1022CT1 Motorola PNP RF Amplifier Transistor Surface Mount Original PDF
    MSA1022-CT1 Motorola PNP RF Amplifier Transistor Surface Mount Original PDF

    MSA1022 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor marking N1

    Abstract: N11 TRANSISTOR MARKING CODE marking N11 MSA1022 n1 a marking
    Text: LESHAN RADIO COMPANY, LTD. PNP RF Amplifier Transistor Surface Mount MSA1022–CT1 COLLECTOR 3 3 2 1 CASE 2 BASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    PDF MSA1022 transistor marking N1 N11 TRANSISTOR MARKING CODE marking N11 n1 a marking

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


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    PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    transistor marking N1

    Abstract: D marking PNP MSA1022 marking code n11 marking N11 n1 a marking
    Text: PNP RF Amplifier Transistor Surface Mount MSA1022–CT1 COLLECTOR 3 3 1 2 CASE 2 BASE 318D–03, STYLE1 SC–59 1 EMITTER MAXIMUM RATINGS T A = 25 °C Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous


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    PDF MSA1022 transistor marking N1 D marking PNP marking code n11 marking N11 n1 a marking

    MSA1022

    Abstract: MSA1022-CT1 SMD310 motorola surface mount marking code MOTOROLA DATE CODE transistor marking code motorola ic
    Text: MOTOROLA Order this document by MSA1022–CT1/D SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


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    PDF MSA1022 MSA1022-CT1 MSA1022-CT1/D* MSA1022-CT1 SMD310 motorola surface mount marking code MOTOROLA DATE CODE transistor marking code motorola ic

    Untitled

    Abstract: No abstract text available
    Text: MSA1022CT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF MSA1022CT1 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: MSA1022BT3 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF MSA1022BT3 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: MSA1022BT1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF MSA1022BT1 Freq150M

    Untitled

    Abstract: No abstract text available
    Text: MSA1022CT3 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A)30m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)0.1u @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF MSA1022CT3 Freq150M

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


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    BC337 BC547

    Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
    Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the


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    PDF MDC5000T1 MDC3105LT1 BC337 BC547 MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


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    PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


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    PDF BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


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    PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


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    PDF BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056

    BC237

    Abstract: MPS-A70 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage


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    PDF MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


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    PDF BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent

    transistor MPS5771

    Abstract: BC237 bfw4
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit


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    PDF MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4

    P2d MARKING CODE

    Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage


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    PDF PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906

    WT transistor

    Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc


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    PDF MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA

    2N5457 MOTOROLA

    Abstract: 2N5457 equivalent BC237 transistor 2N5457
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc


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    PDF 2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457

    Untitled

    Abstract: No abstract text available
    Text: MSA1022-BT1* MSA1022-CT1* CASE 318D-03, STYLE 1 C O LLEC TO R M A XIM U M RATINGS TA = 25 C Rating 3 Symbol Value Unit Collector-Base Voltage v CBO -3 0 V Collector-Em itter Voltage v CEO -2 0 V Emitter-Base Voltage v EBO -5 V 'c -3 0 mA Symbol Max Unit


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    PDF MSA1022-BT1* MSA1022-CT1* 318D-03, SC-59 MSA1022-BT1 MSA1022-CT1 MSA1022-BT1

    Untitled

    Abstract: No abstract text available
    Text: MSA1022-BT1* MSA1022-CT1* CASE 318D-03, STYLE 1 M A X IM U M R A T IN G S TA = 2 5 ‘ C ì R ating S ym bol Value Unit C o lie cto r-B a se Voltage VCBO -3 0 V C o lle cto r-E m itte r V oltage v CEO -2 0 V E m itter-B ase V oltage v EBO -5 V 'c -3 0 mA


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    PDF MSA1022-BT1* MSA1022-CT1* 318D-03, SC-59 1022-B 1022-C

    marking code motorola ic

    Abstract: motorola surface mount marking code MOTOROLA DATE CODE transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR II %1 □““TT 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector-Base Voltage v CBO -3 0 Vdc Collector-Emitter Voltage


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    PDF MSA1022-CT1 318D-03, SC-59 MSA1022-BT1/D) marking code motorola ic motorola surface mount marking code MOTOROLA DATE CODE transistor

    MSC2404C

    Abstract: MSC1621T1 RB
    Text: SC-59 Devices_ Maximum die size 25 mil x 25 mil CASE 318D-03 General-Purpose Transistors Pinout: 1-Emitter, 2-Base, 3-Collector Devices are listed in order of descending breakdown voltage. hpE Device @ lc fT Marking V BR CEO Min Max mA


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    PDF SC-59 318D-03 MSD601-RT1 MSD601-ST1 MSD602-RT1 MSD1328-RT1 MSB709-RT1 MSB709-ST1 MSB710-QT1 MSB710-RT1 MSC2404C MSC1621T1 RB