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    MS18R1624 Search Results

    MS18R1624 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MS18R1624AH0-CK8 Samsung Electronics Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V Original PDF
    MS18R1624DH0-CM8 Samsung Electronics (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V Original PDF
    MS18R1624DH0-CM9 Samsung Electronics (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V Original PDF
    MS18R1624DH0-CT9 Samsung Electronics (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V Original PDF
    MS18R1624EH0-CM8 Samsung Electronics (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V Original PDF
    MS18R1624EH0-CT9 Samsung Electronics (16M x 18) * 4 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V Original PDF
    MS18R1624MN0-CK8 Samsung Electronics Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V Original PDF

    MS18R1624 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MS18R1624 8 MN0-CK8 Preliminary Revision History Version 1.0 (May 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(M-die) base RIMM Datasheet. Version 1.1 (August 2001) * Update based on the latest Rambus RIMM Datasheet Page No. 7 Change Description


    Original     		PDF MS18R1624 256/288Mbit 16Mx18) 288Mb 16K/32ns

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms

    MS18R1622AH0-CK8

    Abstract: MS18R1624AH0-CK8 MS18R1628AH0-CK8
    Text: MS18R1622 4/8 AH0-CK8 Preliminary Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Rev.1.0 Dec. 2001 Page 0 MS18R1622(4/8)AH0-CK8 Preliminary ( 16Mx18)*2(4/8)pcs Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V


    Original     		PDF MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ns MS18R1622AH0-CK8 MS18R1624AH0-CK8 MS18R1628AH0-CK8

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R1622(4/8)EH0


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms

    a80 marking code

    Abstract: marking A32 marking code B38 samsung electronics logo MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms a80 marking code marking A32 marking code B38 samsung electronics logo MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Module Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Module Datasheet.


    Original     		PDF MS18R1622 256/288Mbit 288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms

    a80 marking code

    Abstract: a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8
    Text: Preliminary MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Feb. 2004 Preliminary MS18R1622(4/8)EH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms a80 marking code a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8

    marking b61

    Abstract: transistor marking A21 marking code b35 MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9 MS18R1624DH0-CT9
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V Overview


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms marking b61 transistor marking A21 marking code b35 MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9 MS18R1624DH0-CT9

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning


    Original     		PDF MS18R1622 256/288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms

    marking B44

    Abstract: DH0 165
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ms marking B44 DH0 165

    a74 marking code

    Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Datasheet. - Add 1066MHz-35 binning


    Original     		PDF MS18R1622 256/288Mbit 288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms a74 marking code A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614