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    MPQ6427 Search Results

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    MPQ6427 Price and Stock

    Motorola Semiconductor Products MPQ6427

    Bipolar Junction Transistor, Array, Darlington, TO-116
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MPQ6427 306
    • 1 $11.265
    • 10 $11.265
    • 100 $6.9468
    • 1000 $6.1958
    • 10000 $6.1958
    Buy Now
    MPQ6427 9
    • 1 $37.96
    • 10 $36.062
    • 100 $36.062
    • 1000 $36.062
    • 10000 $36.062
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    MPQ6427 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MPQ6427 Motorola Bipolar Transistor, NPN SILICON ANNULAR DARLINGTON QUAD TRANSISTORS Original PDF
    MPQ6427 National Semiconductor NPN Darlington Transistor Scan PDF

    MPQ6427 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4-611 motorola

    Abstract: MPQ6426 MPQ6427 motorola r04
    Text: I I NPN SILICON ANNULAR@ DARLINGTON QUAD TRANSISTORS .,. designed control for circuits; use as high gain amplifiers drivers for displays, Collector-Emitter Breakdown BVCEO = 40 Vdc Min – MPQ6427 = 30 Vdc (Min) – MPQ6426 DC Current Gain Specified Low Collector-Emitter


    Original
    PDF MPQ6427 MPQ6426 2N6426/2N6427 4-611 motorola MPQ6426 MPQ6427 motorola r04

    LB 124 transistor

    Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
    Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor


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    PDF bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC

    OJ31

    Abstract: A4T SOT23 YT-45 MPQ6427
    Text: MOTOROLA SC 12E D I tBb?s5M ooatoa? i I XSTRS/R F M A X I M U M R A T IN G S Rating Sym bol Collector-Emitter Voltage MPQ6426 MPQ6427 V cEO Collector-Base Voltage VcBO Vdc 30 40 C A SE 646-06, STYLE 1 TO-116 Vdc 40 50 MPQ6426 MPQ6427 Emitter-Base Voltage Collector Current— Continuous


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    PDF MPQ6426 MPQ6427 MPQ6427 O-116 Y14XM, OJ31 A4T SOT23 YT-45

    LB 124 transistor

    Abstract: 2n6427 MPQ6427
    Text: 2N6427/MMBT6427/MPQ6427 National Semiconductor 2N6427 MMBT6427 MPQ6427* TL/G/10100-1 NPN Darlington Transistor Electrical Characteristics T a = 25“C unless otherwise noted Parameter Symbol Min Typ Max Units OFF CHARACTERISTICS V B R C E O Collector-Emitter Breakdown Voltage, (Note 1)


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    PDF 2N6427/MMBT6427/MPQ6427 2N6427 MMBT6427 MPQ6427* TL/G/10100-1 16-S01C LB 124 transistor 2n6427 MPQ6427

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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