SO16 footprint
Abstract: No abstract text available
Text: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB
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MMPQ3467
751B-05,
SO-16
SO16 footprint
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MMPQ3467
Abstract: No abstract text available
Text: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0
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MMPQ3467
r14525
MMPQ3467/D
MMPQ3467
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value Unit VCEO –40 Vdc Collector – Base Voltage
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MMPQ3467
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Untitled
Abstract: No abstract text available
Text: MMPQ3467 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)1.0 P(D) Max. (W)1.2 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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MMPQ3467
Freq190MÃ
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0
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MMPQ3467
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1N916
Abstract: MMPQ3467 SOIC-16 TN3467A
Text: TN3467A MMPQ3467 E C B E B E E B TO-226 B E C SOIC-16 B C C C C C C C PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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TN3467A
MMPQ3467
O-226
SOIC-16
OT-223
1N916
TN3467A
1N916
MMPQ3467
SOIC-16
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MMPQ3467
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 1 CASE 751B–05, STYLE 4 SO–16 MAXIMUM RATINGS Rating Symbol Value
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MMPQ3467/D
MMPQ3467
MMPQ3467/D*
MMPQ3467
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MMPQ3467
Abstract: No abstract text available
Text: ON Semiconductort Quad Memory Driver Transistor MMPQ3467 ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Collector–Base Voltage VCB –40 Vdc Emitter–Base Voltage VEB –5.0
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MMPQ3467
r14525
MMPQ3467/D
MMPQ3467
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MMPQ3467
Abstract: No abstract text available
Text: MMPQ3467 Quad Memory Driver Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB −5.0 Vdc IC −1.0 Adc Collector Current — Continuous
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MMPQ3467
751B-05,
SO-16
16laws
MMPQ3467/D
MMPQ3467
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Untitled
Abstract: No abstract text available
Text: MMPQ3467 Quad Memory Driver Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage VCB −40 Vdc Emitter −Base Voltage VEB −5.0 Vdc IC −1.0 Adc Collector Current — Continuous
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MMPQ3467
MMPQ3467/D
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MMPQ3467
Abstract: SO16 footprint
Text: MOTOROLA Order this document by MMPQ3467/D SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 Motorola Preferred Device 16 MAXIMUM RATINGS 1 Rating Symbol Value Unit VCEO –40 Vdc Collector – Base Voltage
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MMPQ3467/D
MMPQ3467
MMPQ3467/D*
MMPQ3467
SO16 footprint
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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transistor mosfet buv18a
Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Mem ory Driver Transistor MMPQ3467 PNP Silicon Motorola Preferred Device 1 CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO —40 Vdc VCB ^10 Vdc veb 5.0 Vdc 'C 1.0
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MMPQ3467
751B-05,
SO-16
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Untitled
Abstract: No abstract text available
Text: S 3 S S M iC ^ N D U C T Q S ?,s TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings TA = 25°C unless otherwise noted
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TN3467A
MMPQ3467
SOIC-16
TN3467A
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Untitled
Abstract: No abstract text available
Text: S e M lO O N O iJQ T C W » TN3467A MMPQ3467 SOIC-16 PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5 ° C u n le s s o th e r w is e n o te d
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TN3467A
MMPQ3467
TN3467A
SOIC-16
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MMPQ3467
Abstract: SOIC-16 TN3467A
Text: S e m i c o n d u c t o r ' TN3467A MMPQ3467 TN3467AI MMPQ3467 & D iscrete P O W E R & S ig n a l Technologies National SOIC-16 PNP Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d s a tu rated sw itching app lication s at currents to 8 0 0 m A . S o u rc e d fro m P ro c ess 7 0 .
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TN3467A
MMPQ3467
O-226
SOIC-16
S0113D
D04DbMfl
MMPQ3467
SOIC-16
TN3467A
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Untitled
Abstract: No abstract text available
Text: MMPQ3467* CASE 751B-05, STYLE 4 SO-16 M A X I M U M R A T IN G S Rating Value Symbol C o lle c to r-E m itte r V o lta g e Unit v CEO -4 0 Vdc C o lle c to r-B a s e V o lta g e VCB -4 0 Vdc E m itte r-B a se V o lta g e V EB - 5 .0 V dc 'C - 1 .0 Ade C o lle c to r C urre n t — C o n tin u o u s
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MMPQ3467*
751B-05,
SO-16
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MMPQ3467 PNP Silicon dJ V i Z 1 E B a EI M I a H i II 3 Q ü E 3 Motorola Preferred Device irvz 1 CASE 751B -05, STYLE 4 SO -16 MAXIMUM RATINGS Rating Symbol Value VCEO -4 0 Vdc C ollector-B ase Voltage
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MMPQ3467
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751B-03
Abstract: No abstract text available
Text: MMPQ3467* CASE 751B-03, STYLE 1 SO -16 M AXIM UM RATINGS Value Unit VCEO -4 0 Vdc Collector-Base Voltage VCB -4 0 Vdc Em itter-Base Voltage V eb -5 0 Vdc 'c - 1 .0 Ade Rating Sym bol Collector-Em itter Voltage Collector Current — Continuous Each Transistor
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MMPQ3467*
751B-03,
751B-03
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Untitled
Abstract: No abstract text available
Text: M u ltip le B ip o la r T ra n s is to rs — Q u a d .% Davtee Type <v> Mtn MMPQ6502 BOTH 30 V CE SAT % Cob PF M fr ' mA MHz Min Max 0 .5 100 150 200 8 0 .4 10 150 CD7 S O IC -1 6 150 200 8 0 .4 10 150 CD3 T O -1 1 6 m volts d lc /lB & lc Max Configuralion
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MMPQ6502
MPO6502
MMPQ6700
MPQ6700
VMPQ2369
MPQ2388
MMPQ3906
MPQ3906
MMPQ2907A
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MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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