MMBT8050C
Abstract: No abstract text available
Text: MMBT8050W 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO
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MMBT8050W
MMBT8050CW
MMBT8050DW
MMBT8050C
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MMBT8050D
Abstract: MMBT8050C MMBT8550C MMBT8550D
Text: MMBT8050C / MMBT8050D 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary
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MMBT8050C
MMBT8050D
MMBT8550C
MMBT8550D
OT-23
MMBT8050D
MMBT8550D
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MMBT8050CLT1
Abstract: MMBT8050C MMBT8050DLT1 MMBT8550 MMBT8050D MMBT8550CLT1 MMBT8050
Text: MMBT8050CLT1 / MMBT8050DLT1 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050C
MMBT8050DLT1
MMBT8550
MMBT8050D
MMBT8050
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MMBT8050CLT1
Abstract: MMBT8050DLT1 MMBT8050D MMBT8050C MMBT8550CLT1 SEMTECH
Text: MMBT8050CLT1 / MMBT8050DLT1 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550CLT1 and MMBT8550DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050DLT1
MMBT8050D
MMBT8050C
SEMTECH
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MMBT8050
Abstract: MMBT8050 BR mmbt8050 sot-23
Text: MMBT8050 2A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups C and D according to its DC current gain. SOT-23 Plastic Package
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MMBT8050
OT-23
MMBT8050
MMBT8050 BR
mmbt8050 sot-23
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MMBT8050C
Abstract: MMBT8050CLT1 MMBT8050DLT1 MMBT8550CLT1 MMBT8050D
Text: MMBT8050CLT1 / MMBT8050DLT1 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050C
MMBT8050DLT1
MMBT8050D
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BR 8550
Abstract: 8550 sot-23 8550 sot-23 pnp MMBT8550D br 8550 NPN Transistor MMBT8050D ST MMBT8550C 8550 NPN Transistor 8550 TRANSISTOR 8550
Text: MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8550C
MMBT8550D
MMBT8050C
MMBT8050D
OT-23
20MHz
BR 8550
8550 sot-23
8550 sot-23 pnp
MMBT8550D
br 8550 NPN Transistor
MMBT8050D ST
8550 NPN Transistor
8550 TRANSISTOR
8550
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MMBT8050
Abstract: NPN/NPN/MMBT8050 BR MMBT8050D
Text: MMBT8050 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors 1.Base 2.Emitter MMBT8550 is recommended. 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER
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MMBT8050
MMBT8550
OT-23
MMBT8050D
MMBT8050C
MMBT8050
NPN/NPN/MMBT8050 BR
MMBT8050D
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MMBT8050D
Abstract: MMBT8050C MMBT8550 MMBT8550C MMBT8550D
Text: MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550C and MMBT8550D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8050C
MMBT8050D
MMBT8550C
MMBT8550D
OT-23
MMBT8050D
MMBT8550
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MMBT8050
Abstract: No abstract text available
Text: MMBT8050W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage VCEO 25 V Collector Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6 V
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MMBT8050W
MMBT8050
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MMBT8550
Abstract: No abstract text available
Text: MMBT8550 PNP Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the NPN transistors MMBT8050 is recommended. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25℃ PARAMETER
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MMBT8550
MMBT8050
OT-23
MMBT8550C
MMBT8550D
MMBT8550
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MMBT8050
Abstract: No abstract text available
Text: MMBT8050W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V
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MMBT8050W
MMBT8050CW
MMBT8050DW
MMBT8050
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MMBT8550CLT1
Abstract: MMBT8050CLT1 MMBT8550C MMBT8050DLT1 MMBT8550DLT1 MMBT8050 MMBT8550D
Text: MMBT8550CLT1 / MMBT8550DLT1 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050CLT1 and MMBT8050DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8550CLT1
MMBT8550DLT1
MMBT8050CLT1
MMBT8050DLT1
OT-23
100mA
500mA
500mA,
50MHz
MMBT8550C
MMBT8550DLT1
MMBT8050
MMBT8550D
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MMBT8050CLT1
Abstract: MMBT8050DLT1 MMBT8050C MMBT8050D MMBT8050 MMBT8550CLT1
Text: MMBT8050CLT1 / MMBT8050DLT1 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550CLT1 and MMBT8550DLT1 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050DLT1
MMBT8050C
MMBT8050D
MMBT8050
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MMBT8050LT1
Abstract: MMBT8050
Text: MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to MMPT8550LT1 Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 1. 1.BASE 2.EMITTER 3.COLLECTOR
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MMBT8050LT1
OT-23
MMPT8550LT1
500mA
225mW
MMBT8050LT1
MMBT8050
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mmbt8050
Abstract: MMBT8550 MMBT8050 BR mmbt8050 sot-23 MMBT8050C MMBT8050D MMBT805 PNP Epitaxial Silicon Transistor sot-23 NPN/NPN/MMBT8050 BR
Text: MMBT8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550 is recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage
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MMBT8050
MMBT8550
OT-23
MMBT8050C
MMBT8050D
mmbt8050
MMBT8050 BR
mmbt8050 sot-23
MMBT8050C
MMBT8050D
MMBT805
PNP Epitaxial Silicon Transistor sot-23
NPN/NPN/MMBT8050 BR
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MMBT8050C
Abstract: MMBT8050D MMBT8550C MMBT8550D
Text: MMBT8050C / MMBT8050D 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As complementary
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MMBT8050C
MMBT8050D
MMBT8550C
MMBT8550D
OT-23
MMBT8050D
MMBT8550D
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MMBT8050LT1
Abstract: MMBT8050 MMBT805
Text: MMBT8050LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS 1 B PUSH-PULL OPERATION 2 Complement to MMPT8550LT1 Collector Current:Ic=500mA o Collector Dissipation:Pc=225mW Tc=25 C 1. 1.BASE 2.EMITTER 3.COLLECTOR
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MMBT8050LT1
OT-23
MMPT8550LT1
500mA
225mW
MMBT8050LT1
MMBT8050
MMBT805
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MMBT8050DW
Abstract: mmbt8050
Text: MMBT8050W 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO
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Original
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MMBT8050W
MMBT8050CW
MMBT8050DW
MMBT8050DW
mmbt8050
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PDF
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MMBT805
Abstract: No abstract text available
Text: MMBT8050W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Emitter Voltage VCEO 25 V Collector Base Voltage VCBO 40 V Emitter Base Voltage VEBO 6 V
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MMBT8050W
MMBT805
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MMBT8050
Abstract: MMBT8050CLT1 MMBT8050C MMBT8050D MMBT8550 MMBT8050DLT1 MMBT8550CLT1
Text: MMBT8050CLT1 / MMBT8050DLT1 1.5A NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into two groups, C and D, according to its DC current gain. As
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Original
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MMBT8050CLT1
MMBT8050DLT1
MMBT8550CLT1
MMBT8550DLT1
OT-23
MMBT8050
MMBT8050C
MMBT8050D
MMBT8550
MMBT8050DLT1
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MMBT8050D
Abstract: MMBT8050C MMBT8550C MMBT8550D
Text: MMBT8050C / MMBT8050D NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistor MMBT8550C and MMBT8550D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8050C
MMBT8050D
MMBT8550C
MMBT8550D
OT-23
MMBT8050D
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BR 8550
Abstract: br 8550 NPN Transistor 8550 NPN Transistor 8550 SOT-23 MMBT8550C 8550 sot-23 pnp 8550 MMBT8050C MMBT8050D s 8550 c
Text: MMBT8550C / MMBT8550D PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the NPN transistor MMBT8050C and MMBT8050D are recommended. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value
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MMBT8550C
MMBT8550D
MMBT8050C
MMBT8050D
OT-23
20MHz
BR 8550
br 8550 NPN Transistor
8550 NPN Transistor
8550 SOT-23
8550 sot-23 pnp
8550
s 8550 c
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diode st 4148
Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)
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OCR Scan
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MMBT8050LT1
OT-23)
-LL4001-LL4007
-LL4148
1N4001-1N4007
diode st 4148
ST 4148
LL4148 st
8050 sot-23
st 8050
9016 transistor
9014 SOT 23
4148 st
TRANSISTOR 4148
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