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    MIG12J504L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MIG12J504L Mitsubishi High Side Driver Power Supply Original PDF
    MIG12J504L Toshiba Original PDF

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    MIG12J504L

    Abstract: marking mitsubishi
    Text: MIG12J504L MITSUBISHI SEMICONDUCTOR <Intelligent Power Module> MIG12J504L Features The 4th generation trench gate thin wafer NPT IGBT is adopted. FRD is built in. I/O input: logic level 3.3 V / 5 V The level shift circuit by high-voltage IC is built in.


    Original     		PDF MIG12J504L MIG12J504L marking mitsubishi

    Untitled

    Abstract: No abstract text available
    Text: MIG12J504L TOSHIBA Intelligent IGBT Module MIG12J504L Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •


    Original     		PDF MIG12J504L

    MIG12J504L

    Abstract: No abstract text available
    Text: MIG12J504L TOSHIBA Intelligent IGBT Module MIG12J504L Features • The 4th generation trench gate thin wafer NPT IGBT is adopted. • FRD is built in. • I/O input: logic level 3.3 V / 5 V • The level shift circuit by high-voltage IC is built in. •


    Original     		PDF MIG12J504L MIG12J504L