MGFS45V2123A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic
|
Original
|
MGFS45V2123A
MGFS45V2123A
079MIN.
25deg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic
|
Original
|
MGFS45V2123A
MGFS45V2123A
-45dBc
079MIN.
25deg
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
MGFS45V2123A
MGFS45V2123A
079MIN.
25ohm
GF-51
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < L/S band internally matched power GaAs FET > MGFS45V2123A 2.1 – 2.3 GHz BAND / 32W OUTLINE DRAWING DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 – 2.3 GHz band amplifiers. The hermetically sealed metal-ceramic
|
Original
|
MGFS45V2123A
MGFS45V2123A
079MIN.
-45dBc
|
PDF
|
MGFS45V2123A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic
|
Original
|
MGFS45V2123A
MGFS45V2123A
-45dBc
25deg
|
PDF
|
MGFS45V2123
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1-2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION OUTLINE DRAWING The M G FS45V2123 is an internally im pedance matched GaAs power FET especially designed for use in 2.1 -2 .3 GHz band amplifiers. The herm etically sealed m etal-ceramic
|
OCR Scan
|
MGFS45V2123
FS45V2123
-45dBc
MGFS45V2123
|
PDF
|
MGFS45V2123
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3
|
Original
|
MGFS45V2123
MGFS45V2123
-45dBc
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2123 2.1-2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFS45V2123 is an internally impedance m atched GaAs power FET especially designed for use in 2.1 ~2.3
|
OCR Scan
|
MGFS45V2123
MGFS45V2123
|
PDF
|
MGFS45V2123A
Abstract: No abstract text available
Text: MITSUBISHI SEM ICO NDUCTOR <GaAs FET> MGFS45V2123A 2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFS45V2123A is an internally impedance-matched GaAs power FET especially designed for use in 2.1 - 2.3 GHz band amplifiers.The hermetically sealed metal-ceramic
|
OCR Scan
|
MGFS45V2123A
FS45V2123A
-45dBc
25deg
MGFS45V2123A
|
PDF
|
C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
|
Original
|
M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
|
PDF
|
MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
|
Original
|
H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
|
PDF
|
