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    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC48B5258 5.2~5.8GHz BAND 60W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC48B5258 device is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ∼ 5.8GHz


    Original     		PDF MGFC48B5258 MGFC48B5258 48dBm 25deg 202mA

    MGFC48B5258

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC48B5258 5.2~5.8GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC48B5258 device is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ∼ 5.8GHz


    Original     		PDF MGFC48B5258 MGFC48B5258 48dBm 25deg 202mA