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Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC45V3642A
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MGFC45V3642A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : m m O U TLIN E The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC45V3642A
MGFC45V3642A
-45dBc
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June/2004
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GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Abstract: MGFC45V3642A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC45V3642A is an internally impedance-matched
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MGFC45V3642A
MGFC45V3642A
GAAS FET AMPLIFIER f 10Mhz to 2 GHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC45V3642A
MGFC45V3642A
-45dBc
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June/2004
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MGFC45V3642A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 - 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC45V3642A
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-45dBc
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45V3642A 3.6 – 4.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V3642A is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC45V3642A
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFC45V3642A 3.6 DESCRIPTION - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET u n it : m m OUTLINE The M G F C 45V 3642A is an in ternally im ped ance-m a tched
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIMINARY Notice: This is not a final specification. Som e param etric limits are subject to change. MGFC45V3642A 3.6 - 4.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION T he M G F C 45V 3642A is an in ternally im pedance-m atched
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MGFC45V3642A
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