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    MGFC41V5964 Search Results

    MGFC41V5964 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC41V5964 Mitsubishi 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC41V5964 Mitsubishi 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC41V5964A Mitsubishi 5.9-6.4GHz band 12W internally matched GaAs FET Original PDF

    MGFC41V5964 Datasheets Context Search

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    MGFC41V5964

    Abstract: fet 30 f 124
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4


    Original     		PDF MGFC41V5964 MGFC41V5964 50ohm Item-51] 30dBm fet 30 f 124

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V5964 MGFC41V5964

    12w 94

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V5964 5.9 – 6.4 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V5964 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 – 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V5964 MGFC41V5964 -45dBc 30dBm 12w 94

    fet 30 f 124

    Abstract: TIP 41 fet "GaAs FET" MGFC41V5964
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters inches 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4


    Original     		PDF MGFC41V5964 MGFC41V5964 50ohm Item-51] 30dBm June/2004 fet 30 f 124 TIP 41 fet "GaAs FET"

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    3642G

    Abstract: No abstract text available
    Text: •GaAs FET SERIES FOR MICROWAVE-BAND MEDIUM AND HIGH POWER AMPLIFIERS CONTINUED , \Ta =25 C ) , Max. ratings Bias conditions frequancy Type No. HIGH F R E Q J E N C ' DEVICES vs r M GFC44V4450* « MGFC36V5258 MGFC39V5258 & MGFC40V5258 X. MGFC42V5258 MGFC36V5964A m


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