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    MGFC40V7177A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC40V7177A Mitsubishi 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET Scan PDF

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    MGFC40V7177A

    Abstract: pir 5 S28C
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC40V7177A PREUM'Ni ì ? y I * . 1 “ “ Nol««' ' 1,e»'>c'"fl,ts to cV»ân9 3 -" s°mep 7 .1 — 7 .7 G H z BAND ÎO W INTERNA LLY M ATCHED GaAs FET DESCRIPTION T h e M G F C 4 0 V 7 1 7 7 A isan internally im p e d a n c e -m a tc h e d


    OCR Scan     		PDF MGFC40V MGFC40V7177Aisan MGFC40V7177A pir 5 S28C

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    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> p b ê u m w a MGFC40V7177A *? , 7.1~7.7GHi BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 17 7 A is an internally im pedance-m atched GaAs power FET especially designed fo r use in 7.1 — 7 ,7 GHz band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF MGFC40V7177A