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    M 1661 S

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power


    OCR Scan     		PDF MGFC2415A MGFC2400 150mA M 1661 S

    MGFC2415

    Abstract: MGF2415A-11 MGF2415A 0/MGF2415A
    Text: A Die_ MGFC2415 Package MG F2415A m it s u b is h i ELECTRONIC DEVICE GROUP DESCRIPTION MGFC2415 FEATURES The MGFC2400 series GaAs FETs are N-channel Schottky gate devices designed for high frequency, medium and high power applications. • High output power


    OCR Scan     		PDF MGFC2400 250mW MGFC2415 F2415A MGF2415A MGFC2415-T02 MGFC2415-T03 MGF2415A-11 MGF2415A 0/MGF2415A