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    MGF4955A Datasheets (1)

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    MGF4955A Mitsubishi super-low noise HEMT (High Electron Mobility Transistor) Original PDF

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    Abstract: No abstract text available
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4955A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4955A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		June/2004 MGF4955A MGF4955A 12GHz 3000pcs PDF

    mitsubishi ordering information

    Abstract: MGF4955A InGaAs HEMT mitsubishi transistor P7d mitsubishi package
    Text: June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4955A SUPER LOW NOISE InGaAs HEMT Leadless Ceramic Package DESCRIPTION Outline Drawing The MGF4955A super-low noise HEMT (High Electron Mobility Transistor) is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.


    Original     		June/2004 MGF4955A MGF4955A 12GHz 3000pcs mitsubishi ordering information InGaAs HEMT mitsubishi transistor P7d mitsubishi package PDF