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    MGF4918D Search Results

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    MGF4918D Price and Stock

    mit MGF4918D

    Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGF4918D 732
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    mit MGF4918D29

    SUPER LOW NOISE INGAAS HEMT RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGF4918D29 19,950
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    MGF4918D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MGF4918D Mitsubishi TAPE CARRIER SUPER LOW NOISE INGAAS HEMT Scan PDF

    MGF4918D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MGF4918D

    Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
    Text: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F


    OCR Scan     		PDF GD-16 GD-15 GD-18 MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E12 MGF4918D MGF4919F MGF4919 MGF4319F MGF-4317D MGF4914D

    MGF4310

    Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
    Text: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.


    OCR Scan     		PDF MGFC4410 MGF4310 MGF4910 200um 8E-30 MGF4914E-01 MGF4918E-01 12GHz, MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318

    MGF4918D

    Abstract: MGF4914D mitsubishi mgf M5M27C102 MGF4910D MGF4316D MGF4916C mgf4916d A0523 MGF4917
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 D OUTLINE DRAWING series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: mtlimeters (inches)


    OCR Scan     		PDF MGF4910D 491OD 12GHz MGF4914D: MGF4916D: MGF4917D: MGF4918D: -to-id-25 MGF4918D MGF4914D mitsubishi mgf M5M27C102 MGF4316D MGF4916C mgf4916d A0523 MGF4917

    MGF4918D

    Abstract: MGF4910D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d
    Text: ! MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910D Series TAPE CARRIER SUPER LOW NOISE InGaAs HEMT DESCRIPTION The MGF4910D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to l< band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGF4910D 12GHz F4914D: F4916D: F4917D: F4918D: 12GHz MGF4914D MGF4918D MGF4916D MGF4917D mgf4914 mitsubishi mgf mitsubishi mgf-4918d