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Powerex Power Semiconductors MG800J2YS50A IGBT MOD 600V 800A 2900W
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DigiKey	MG800J2YS50A	Bulk			1	1 $320.12 10 $320.12 100 $320.12 1000 $320.12 10000 $320.12	Buy Now

MG800J2YS50A Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG800J2YS50A		Mitsubishi	TRANS IGBT MODULE N-CH 600V 800A		Original	PDF
MG800J2YS50A		Powerex	IGBTs - Modules, Discrete Semiconductor Products, IGBT MOD CMPCT 600V 800A		Original	PDF
MG800J2YS50A		Toshiba			Original	PDF
MG800J2YS50A		Toshiba	Compact IGBT Modules & Compact IPM		Original	PDF
MG800J2YS50A		Toshiba	Compact Compact-IGBT		Original	PDF

MG800J2YS50A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MG800J2YS50A Abstract: No abstract text available Text: MG800J2YS50A MITSUBISHI IGBT Module MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2 G1 Fo1 E1 E1/C2 G2	Original	MG800J2YS50A 23F22G MG800J2YS50A	PDF
Untitled Abstract: No abstract text available Text: MG800J2YS50A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 800 Amperes/600 Volts A D H J K DETAIL "A" C2E1 E2 C1 B E F M W F G G #110 TAB (8 PLACES) X (4 PLACES) N Y (3 PLACES)	Original	MG800J2YS50A Amperes/600	PDF
Untitled Abstract: No abstract text available Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit TH1 C1 TH2	Original	MG800J2YS50A 2-126A2A	PDF
3000 watt ups circuit diagram Abstract: 4000 watt power UPS circuit diagram RG103 MG800J2YS50A 07104 JC2000 Text: MG800J2YS50A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 800 Amperes/600 Volts A D H J K DETAIL "A" C2E1 E2 C1 B E F M W F G G #110 TAB (8 PLACES) X (4 PLACES) N Y (3 PLACES)	Original	MG800J2YS50A Amperes/600 125ENT 3000 watt ups circuit diagram 4000 watt power UPS circuit diagram RG103 MG800J2YS50A 07104 JC2000	PDF
TOSHIBA IGBT Abstract: No abstract text available Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Unit: mm Equivalent Circuit TH1	Original	MG800J2YS50A 2-126A1A TOSHIBA IGBT	PDF
Untitled Abstract: No abstract text available Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Unit: mm Equivalent Circuit TH1	Original	MG800J2YS50A 2-126A2A	PDF
Untitled Abstract: No abstract text available Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications • The electrodes are isolated from case. · Enhancement-mode · Thermal output terminal TH Unit: mm Equivalent Circuit TH1	Original	MG800J2YS50A 2-126A1A	PDF
MG800J2YS50A Abstract: RG412 Text: MG800J2YS50A TOSHIBA IGBT Module Silicon N Channel IGBT MG800J2YS50A High power switching applications Motor control applications Unit: mm • The electrodes are isolated from case. • Enhancement-mode • Thermal output terminal TH Equivalent Circuit Ｃ1	Original	MG800J2YS50A 2-126A1A MG800J2YS50A RG412	PDF
GT30J322 Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬	Original	MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X	PDF
2SA1930 2sc5171 Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228	Original	SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn	PDF
tlp421 equivalent Abstract: igbt protection circuit diagram MQ400V1US51A igbt controller IPM module MG400Q2YS60A 110C mg600Q1US59 MG300Q2YS60A MG400V2YS60A Text: NEW COMPACT IGBT MODULES WITH INTEGRATED CURRENT AND TEMPERATURE SENSORS By Eric R. Motto, John F. Donlon Application Engineering Powerex Incorporated Abstract – A new family of compact IGBT modules has been developed to bridge the gap between fully integrated IPM devices and basic IGBT modules. The idea of this new family was	Original		PDF
MG400V2YS60A Abstract: MG600Q2YS60A MG800J2YS50A W1203 TOSHIBA Text: New Product Guide Compact-IGBT Series PRODUCT GUIDE Compact-IGBT Series Outline Equivalent Circuit Package Dimensions Toshiba have developed a low-loss high-power compact IGBT series whose devices are housed in compact packages. These devices are intended mainly for use in high-power inverters and servo amps. The	Original	2-126A1A MG400V2YS60A MG600Q2YS60A MG800J2YS50A W1203 TOSHIBA	PDF
MIG50Q7CSB1X Abstract: IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A Text: New Product Guide Compact IGBT Modules & Compact IPM NEW PRODUCT GUIDE Compact IGBT Modules Features • The new package technology achieved small and compact size. • The new generation IGBT and FRD chips achieved low loss and low emission noise. • Fault-signal output circuit short circuit and overtemperature is included.	Original	E87989 MIG50Q7CSB1X IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A	PDF
Untitled Abstract: No abstract text available Text: ＰＤＦエラー報告書該当ページエラー項目形名に変な文字が明記されているヘッダに「ＴＯＳＨＩＢＡ」ロゴや形名が明記されていないフッタに更新日付が明記されていないフッタの更新日付が古い三ヶ月以上	Original	MG800J2YS50A	PDF

Untitled Abstract: No abstract text available Text: TO SH IBA MG800J2YS50A TOSHIBA IGBT MODULE TENTATIVE SILICON N CHANNEL IGBT MG800J2YS50A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. Enhancement-Mode Thermal Output Terminal TH	OCR Scan	MG800J2YS50A THIOTH20G 2-126A1A 000707EAA1 B25/85	PDF