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    Toshiba America Electronic Components MG75Q1JS43

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    MG75Q1 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG75Q1BS11 Toshiba N channel IGBT Original PDF
    MG75Q1BS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG75Q1BS11 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG75Q1BS11 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG75Q1JA40 Toshiba HIGH POWER SWITCHING APPLICATIONS CHOPPER APPLICATIONS Scan PDF
    MG75Q1JS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, chopper applications Original PDF
    MG75Q1ZS50 Toshiba High Power Switching Applications Motor Control A Original PDF
    MG75Q1ZS50 Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Original PDF

    MG75Q1 Datasheets Context Search

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    TOSHIBA IGBT DATA BOOK

    Abstract: TOSHIBA IGBT MG75Q1BS11 IGBT Guide
    Text: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		PDF MG75Q1BS11 2-33D2A TOSHIBA IGBT DATA BOOK TOSHIBA IGBT MG75Q1BS11 IGBT Guide

    MG75Q1BS11

    Abstract: No abstract text available
    Text: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C


    Original     		PDF MG75Q1BS11 2-33D2A MG75Q1BS11

    Untitled

    Abstract: No abstract text available
    Text: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode


    Original     		PDF MG75Q1JS40 2-94D1A

    MG75Q1ZS50

    Abstract: No abstract text available
    Text: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode


    Original     		PDF MG75Q1ZS50 2-94D7A MG75Q1ZS50

    TOSHIBA IGBT DATA BOOK

    Abstract: MG75Q1ZS50
    Text: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode


    Original     		PDF MG75Q1ZS50 2-94D7A TOSHIBA IGBT DATA BOOK MG75Q1ZS50

    MG75Q1JS40

    Abstract: mg75q1j
    Text: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG75Q1JS40 2-94D1A MG75Q1JS40 mg75q1j

    Untitled

    Abstract: No abstract text available
    Text: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)


    Original     		PDF MG75Q1ZS50 2-94D7A

    Untitled

    Abstract: No abstract text available
    Text: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs Max trr = 0.5µs (Max) Low saturation voltage : VCE (sat) = 4.0V (Max) Enhancement-mode


    Original     		PDF MG75Q1JS40 2-94D3A

    Untitled

    Abstract: No abstract text available
    Text: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		PDF MG75Q1JS40 2-94D1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG75Q1BS11 M G 7 5 Q 1 BS1 1 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT U nit in mm HIGH POWER; SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O.us Max. Low Saturation Voltage: V q e (sat) = 2.7V (Max.)


    OCR Scan     		PDF MG75Q1BS11 2-33D1A

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M5 • • 2~05.6±o.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75Q1JS40 2-94D3A Is75Q1JS40

    MG75Q1JS40

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q1JS40 TOSHIBA GTR MODULE m •« ■ SILICON N CHANNEL IGBT r , 7 r n 1 i<;An m agr ■ w mm ■ ^ur HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75Q1JS40 MG75Q1JS40

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG75Q1JS40 MG75Q1 JS40 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT HIGH P O W E R SW IT C H IN G APPLICATIO N S. Unit in mm C H O PPE R APPLIC ATIO N S. • • High Input Impedance High Speed : tf=0.5/^s Max. trr = 0.5/iS (Max.)


    OCR Scan     		PDF MG75Q1JS40 MG75Q1 961001EAA2

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • 3-M 5 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)


    OCR Scan     		PDF MG75Q1JS40 2-94D3A

    Untitled

    Abstract: No abstract text available
    Text: MG75Q1BS11 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage: V q e (sat) —2.7V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG75Q1BS11 17ry\iH U1111VVL 2500EMITTER Tc--25

    MG75Q1BS11

    Abstract: No abstract text available
    Text: TOSHIBA M G75Q 1BS11 MG75Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O^s Max. Low Saturation Voltage: Vce (sat) —2.7V(Max.) Enhancement-Mode


    OCR Scan     		PDF MG75Q1BS11 2-33D1A MG75Q1BS11

    MG75Q1

    Abstract: MG75Q1JS40 JS-40
    Text: TO SH IBA MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q1JS40 HIGH POWER SWITCHING APPLICATIONS CHOPPER APPLICATIONS • • High Input Impedance High Speed : tf = 0.5 /us Max. C . . - /T V /r_\ lrr _— Au*u M* K^i'd2L.j A. • • •


    OCR Scan     		PDF MG75Q1JS40 MG75Q1 2-94D1A 000707EAA1 MG75Q1JS40 JS-40

    ba ph 20v diode

    Abstract: MG75Q1 MG75Q1JS40
    Text: TOSHIBA MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q1JS40 HIGH POWER SWITCHING APPLICATIONS. Unit in mm CHOPPER APPLICATIONS. 3 -M 5 2 -0 5 .6 ± O .3 High Input Impedance High Speed : tf=0.5/^s Max. trr= 0.5/^s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG75Q1JS40 MG75Q1 18tt0 2-94D3A ba ph 20v diode MG75Q1JS40

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q1ZS50 MG75Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG75Q1ZS50

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG75Q1BS11 M G 7 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage: Vqe ( s a t ) ~ 2.7V(Max.)


    OCR Scan     		PDF MG75Q1BS11

    AST0

    Abstract: MG75Q1ZS50
    Text: TOSHIBA MG75Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q1ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.) Enhancement-Mode


    OCR Scan     		PDF MG75Q1ZS50 2-94D7A AST0 MG75Q1ZS50

    S5J53

    Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
    Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction


    OCR Scan     		PDF 200-V 400J101H MG75J1BS11 MG25J1B511 MG50J1BS11 MG100J1BS11 MG150J1BS11 MG25Q1BS11 MG50Q1BS11 MG75Q1BS11 S5J53 MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG40001US41

    Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
    Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50


    OCR Scan     		PDF MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50