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    MG400J1US51 Search Results

    MG400J1US51 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG400J1US51 Toshiba N channel IGBT Original PDF
    MG400J1US51 Toshiba TRANS IGBT MODULE N-CH 600V 400A 4(2-109A4A) Original PDF
    MG400J1US51 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG400J1US51 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG400J1US51(AC) Toshiba TRANS IGBT MODULE N-CH 600V 400A 4(2-109A4A) Original PDF

    MG400J1US51 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG400J1US51

    Abstract: No abstract text available
    Text: MG400J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG400J1US51 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original     		PDF MG400J1US51 MG400J1US51

    MG400J1US51

    Abstract: No abstract text available
    Text: MG400J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG400J1US51 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG400J1US51 MG400J1US51

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG400J1US51 TO SH IBA GTR M O D U LE SILICON N CHANNEL IGBT M G 4 0 0 J 1 US51 HIGH P O W ER SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • H ig h In p u t Impedance • Includes a Complete H a lf B ridge in One


    OCR Scan     		PDF MG400J1US51

    GT80J101

    Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
    Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412


    OCR Scan     		PDF GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5

    Untitled

    Abstract: No abstract text available
    Text: MG400J1US51 HIGH P O W E R SW ITC H IN G A PPLICA TIO N S. M O T O R C O N T R O L A PPLICATIO N S. • » • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One Package. Enhancement-Mode High Speed : tf= 0.30/is Max. (Ic = 400A)


    OCR Scan     		PDF MG400J1US51 30/is 15//s

    J1US51

    Abstract: No abstract text available
    Text: MG400J1US51 T O S H IB A M G 4 0 0 J 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG400J1US51 TjS125 J1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG400J1US51 MG4 QQJ 1 US5 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package.


    OCR Scan     		PDF MG400J1US51

    00J1

    Abstract: MG400J1US51 S300 3111R FR-650 2109A
    Text: MG400J1US51 TOSHIBA M G 4 0 0 J 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


    OCR Scan     		PDF MG400J1US51 2-109A4A 00J1 MG400J1US51 S300 3111R FR-650 2109A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG400J1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 400J1 US51 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One Package.


    OCR Scan     		PDF MG400J1US51 400J1

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9

    MG50Q6ES41

    Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
    Text: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750


    OCR Scan     		PDF GT15J101 MG25J1BS11 MG50J1BS11 MG50J1E1S11 MG75J1BS11 GT15Q101 GT25Q101 MG50Q6ES41 MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 MG300J1US1

    MG50Q6es41

    Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
    Text: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752


    OCR Scan     		PDF GT15J101 MG25J1BS11 MG50J1BS11 MG75J1BS11 MP6750 MP6752 MG25J6ES40 MG50Q6es41 MG8QES42 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1

    mg500q1us1

    Abstract: MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5
    Text: .3 UL Approvals List All devices are included in: File number: . E87989 Section number: 4. 1700 V Types MG30V2YS40 . 80* MG90V2YS40 . 80*


    OCR Scan     		PDF E87989 MG50J2YS50. MG50J6F MG75J2YS50. MG75J6ES50 MG100J2YS50 MG100J6ES50 MG150J2YS50 MG200J2YS50 MG7SQ2YS40 mg500q1us1 MG100J2YS50 mg300q1us41 mg75j6es50 MG400Q1US41 MG25Q2YS40 MG100Q2YS42 MIG20J901H MG50Q2YS40 mg100j6es5

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		PDF 2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45