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    Powerex Power Semiconductors MG200Q2YS60A

    IGBT MOD 1200V 200A 2000W
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    MG200Q2 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG200Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q2YS1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q2YS11 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q2YS40 Toshiba TRANS IGBT MODULE N-CH 1200V 200A 7(2-109C1A) Original PDF
    MG200Q2YS40 Toshiba Silicon N-channel IGBT GTR module for high power switching, chopper applications Original PDF
    MG200Q2YS50 Toshiba TRANS IGBT MODULE N-CH 1200V 300A 7(2-109C4A) Original PDF
    MG200Q2YS50 Toshiba N channel IGBT Original PDF
    MG200Q2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG200Q2YS50 Toshiba N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG200Q2YS60A Mitsubishi TRANS IGBT MODULE N-CH 1200V 200A Original PDF
    MG200Q2YS60A Powerex IGBTs - Modules, Discrete Semiconductor Products, IGBT MOD CMPCT DUAL 1200V 200A Original PDF
    MG200Q2YS60A Toshiba Silicon N Channel IGBT Original PDF
    MG200Q2YS60A Toshiba Compact IGBT Modules & Compact IPM Original PDF
    MG200Q2YS65H Toshiba TRANS IGBT MODULE N-CH 1200V 200A 7(2-109C4A) Original PDF
    MG200Q2YS65H Toshiba Silicon N Channel IGBT Original PDF
    MG200Q2YS9 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG200Q2YS91 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG200Q2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MG200Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 200 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA


    Original     		PDF MG200Q2YS60A Amperes/1200

    Toshiba MG200Q2YS40

    Abstract: MG200Q2YS40
    Text: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode


    Original     		PDF MG200Q2YS40 2-109C1A Toshiba MG200Q2YS40 MG200Q2YS40

    Toshiba MG200Q2YS40

    Abstract: MG200Q2YS40
    Text: MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)


    Original     		PDF MG200Q2YS40 2-109C1A Toshiba MG200Q2YS40 MG200Q2YS40

    MG200Q2YS65H

    Abstract: No abstract text available
    Text: MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2 JEDEC


    Original     		PDF MG200Q2YS65H 2-109C4A MG200Q2YS65H

    MG200Q2YS60A

    Abstract: No abstract text available
    Text: MG200Q2YS60A MITSUBISHI IGBT Module MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG200Q2YS60A MG200Q2YS60A 200V/200A

    MG200Q2YS60A

    Abstract: No abstract text available
    Text: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG200Q2YS60A MG200Q2YS60A 200V/200A 2-123C1B

    MG200Q2YS65H

    Abstract: No abstract text available
    Text: MG200Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG200Q2YS65H 2-109C4A MG200Q2YS65H

    Untitled

    Abstract: No abstract text available
    Text: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG200Q2YS60A 200V/200A 2-123C1B

    Untitled

    Abstract: No abstract text available
    Text: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG200Q2YS60A MG200Q2YS60A 200V/200A 2-123C1B

    Untitled

    Abstract: No abstract text available
    Text: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG200Q2YS60A MG200Q2YS60A 200V/200A 2-123C1B

    Mg200q2ys50

    Abstract: MG200 toshiba MG200Q2YS50
    Text: MG200Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive Load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG200Q2YS50 2-109C4A 140transportation Mg200q2ys50 MG200 toshiba MG200Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: MG200Q2YS60A TOSHIBA IGBT Module Silicon N Channel IGBT MG200Q2YS60A 1200V/200A 2in1 High Power Switching Applications Motor Control Applications • Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature)


    Original     		PDF MG200Q2YS60A MG200Q2YS60A 200V/200A 2-123C1B

    MG200Q2YS50

    Abstract: toshiba MG200Q2YS50
    Text: MG200Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max.)


    Original     		PDF MG200Q2YS50 2-109C4A MG200Q2YS50 toshiba MG200Q2YS50

    Z1506

    Abstract: Toshiba MG200Q2YS40
    Text: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG200Q2YS40 2-109C1A Z1506 Toshiba MG200Q2YS40

    Toshiba MG200Q2YS40

    Abstract: LT-15V MG200Q2YS40 YS40 OHS03 JE transistor
    Text: TOSHIBA MG200Q2YS40 M G 2 0 0 Q 2 YS4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4 -F ast-on Tab #110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)


    OCR Scan     		PDF MG200Q2YS40 MG200Q2 2-109C1A Toshiba MG200Q2YS40 LT-15V MG200Q2YS40 YS40 OHS03 JE transistor

    toshiba MG200Q2YS50

    Abstract: MG200Q2YS50
    Text: TO SHIBA MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2 YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode


    OCR Scan     		PDF MG200Q2YS50 200Q2 10//s toshiba MG200Q2YS50 MG200Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50 TjS125Â

    mg200q2ys11

    Abstract: MG200Q2YS1
    Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG200Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications 3-M 5 Motor Control Applications Features • High input impedance • High speed: tf = 1 .Ojas Max. • Low saturation voltage:


    OCR Scan     		PDF MG200Q2YS11 PW03940796 DQ22QTfi mg200q2ys11 MG200Q2YS1

    transistor IR 652 P

    Abstract: No abstract text available
    Text: TO SH IBA M G200Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG200Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H igh Speed : tf= 0.3/is M ax. @Inductive Load Low Saturation Voltage


    OCR Scan     		PDF G200Q2YS50 MG200Q2YS50 961001EAA2 transistor IR 652 P

    K643

    Abstract: mg200q2 Toshiba MG200Q2YS40 GE647
    Text: TO SH IBA MG200Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGEST MG200Q2YS40 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • • • 4 - Fast -on Tab #110 High Input Impedance H ig h sp eed tf=0.5/<s Max.


    OCR Scan     		PDF MG200Q2YS40 2-109C1A K643 mg200q2 Toshiba MG200Q2YS40 GE647

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG200Q2YS40 2-109C1A

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50

    Toshiba MG200Q2YS40

    Abstract: No abstract text available
    Text: TOSHIBA MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mf i ?nnn?Y<; z Ln Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 -F ast-o n Tab #110 High Input Impedance High Speed : tf=0.5/^s Max. (Max.) Low Saturation Voltage


    OCR Scan     		PDF MG200Q2YS40 2-109C1A Toshiba MG200Q2YS40

    transistor JSW

    Abstract: toshiba srf
    Text: T O S H IB A MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG200Q2YS50 transistor JSW toshiba srf