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    MBR60040CTR Search Results

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    MBR60040CTR Price and Stock

    GeneSic Semiconductor Inc MBR60040CTR

    DIODE MOD SCHOTT 40V 300A 2TOWER
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    DigiKey MBR60040CTR Bulk 80
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    Mouser Electronics MBR60040CTR
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    NAC MBR60040CTR 25
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    GeneSic Semiconductor Inc MBR60040CTRL

    DIODE MOD SCHOTT 40V 300A 2TOWER
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    DigiKey MBR60040CTRL Bulk 25
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    NAC MBR60040CTRL 25
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    Navitas Semiconductor MBR60040CTR

    Silicon Rectifier Module - Schottky (Rev Config) - 40V - 600A - Twin Tower
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    Onlinecomponents.com MBR60040CTR
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    MBR60040CTR Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBR60040CTR America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::600A; case_package::Three Tower Modules Original PDF
    MBR60040CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE MODULE 40V 600A Original PDF
    MBR60040CT(R) Transys Electronics SCHOTTKY DIODES MODULE TYPE 600A Original PDF
    MBR60040CTR America Semiconductor MBR60040 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::600A; case_package::Three Tower Modules Scan PDF
    MBR60040CTRL GeneSiC Semiconductor Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 40V 300A 2 TOWER Original PDF

    MBR60040CTR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBR60020CT thru MBR60040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR60020CT MBR60040CTR MBR60020CT MBR60030CT MBR60035CT MBR60040CT

    Untitled

    Abstract: No abstract text available
    Text: MBR60020CT thru MBR60040CTR Silicon Power Schottky Diode VRRM = 20 V - 40 V IF AV = 600 A Features • High Surge Capability • Types from 20 V to 40 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR60020CT MBR60040CTR MBR60030CT MBR60035CT MBR60040CT

    MBR60020CT

    Abstract: MBR60030CT MBR60035CT MBR60040CT 600600A
    Text: MBR60020CT thru MBR60040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR60020CT MBR60040CTR MBR60020CT MBR60030CT MBR60035CT MBR60040CT MBR60030CT MBR60035CT MBR60040CT 600600A

    Untitled

    Abstract: No abstract text available
    Text: MBR60020CT thru MBR60040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 600 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR60020CT MBR60040CTR MBR60020CT MBR60030CT MBR60035CT MBR60040CT 175se

    MBR60020CT

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MBR60020CT thru MBR60040CTR Silicon Schottky Diode, 600A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		PDF MBR60020CT MBR60040CTR MBR60020CT MBR60030CT MBR60035CT MBR60040CT