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    MBR200100CTR Search Results

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    MBR200100CTR Price and Stock

    GeneSic Semiconductor Inc MBR200100CTR

    DIODE MOD SCHOT 100V 200A 2TOWER
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    DigiKey MBR200100CTR Bulk 80
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    Mouser Electronics MBR200100CTR
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    • 100 $90.13
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    Newark MBR200100CTR Bulk 80
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    NAC MBR200100CTR 25
    • 1 $79.42
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    • 100 $68.83
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    Navitas Semiconductor MBR200100CTR

    Silicon Rectifier Module - Schottky (Rev Config) - 100V - 200A - Twin Tower
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    Onlinecomponents.com MBR200100CTR
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    MBR200100CTR Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MBR200100CTR America Semiconductor HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Original PDF
    MBR200100CTR GeneSiC Semiconductor Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 200A 2TOWER Original PDF
    MBR200100CTR America Semiconductor MBR200100 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules Scan PDF

    MBR200100CTR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT

    Untitled

    Abstract: No abstract text available
    Text: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed


    Original     		PDF MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT

    Untitled

    Abstract: No abstract text available
    Text: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 200 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)


    Original     		PDF MBR20045CT MBR200100CTR MBR20060CT MBR20080CT MBR200100CT

    MBR20045CT

    Abstract: No abstract text available
    Text: Naina Semiconductor Ltd. MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified


    Original     		PDF MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100C