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KAGA FEI America Inc MB85R1001ANC-GE1 IC FRAM 1MBIT PARALLEL 48TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MB85R1001ANC-GE1	Tray	1,996		1	1 $11.15 10 $9.893 100 $9.206 1000 $8.06221 10000 $7.77572	Buy Now
Mouser Electronics	MB85R1001ANC-GE1		704			1 $10.31 10 $9.55 100 $8.18 1000 $7.68 10000 $7.43	Buy Now
FUJITSU Limited MB85R1001ANC-GE1 Fram, 1M, Parallel, 3V, 48Tsop; Memory Type:Fram; Memory Size:1Mbit; Nvram Memory Configuration:128K X 8Bit; Ic Interface Type:Parallel; Access Time:100Ns; Memory Case Style:Tsop; No. Of Pins:48Pins; Supply Voltage Min:3V; Supply Rohs Compliant: Yes \|Fujitsu MB85R1001ANC-GE1
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Newark	MB85R1001ANC-GE1	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
RAMXEED MB85R1001APFCN 1Mbit FRAM x8 parallel TSOP48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Symmetry Electronics	MB85R1001APFCN				1	1 $11.08 10 $11.08 100 $11.08 1000 $11.08 10000 $11.08	Buy Now
RAMXEED MB85R1001ANC-GE1 1Mbit FRAM (128k x8) parallel interface - TSOP48 tray
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Symmetry Electronics	MB85R1001ANC-GE1				1	1 $7.65 10 $7.65 100 $7.65 1000 $7.65 10000 $7.65	Buy Now

MB85R1001A Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MB85R1001ANC-GE1		Fujitsu	Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP		Original	PDF

MB85R1001A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-2v0-E MB85R1001A MB85R1001A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-0v01-E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process	Original	DS501-00003-0v01-E MB85R1001A MB85R1001A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-4v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-4v0-E MB85R1001A MB85R1001A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,	Original	NP501-00005-3v0-E MB85R1001A MB85R1001A FPT-48P-M48)	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-3v0-E MB85R1001A MB85R1001A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-3v0-E MB85R1001A MB85R1001A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-1v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS	Original	DS501-00003-1v0-E MB85R1001A MB85R1001A	PDF