Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MA6S718 Search Results

    MA6S718 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA6S718 Panasonic Silicon epitaxial planar type Original PDF
    MA6S718 Panasonic Diode Original PDF
    MA6S718 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MA6S718 Unknown High Frequency Device Data Book (Japanese) Scan PDF

    MA6S718 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA6S718

    Abstract: MA6Z718
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0 to 0.1 5˚ Symbol Rating


    Original     		PDF 2002/95/EC) MA6Z718 MA6S718) MA6S718 MA6Z718

    MA6S718

    Abstract: MA6Z718
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF MA6Z718 MA6S718) MA6S718 MA6Z718

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing


    Original     		PDF 2002/95/EC) MA6Z718 MA6S718)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Low forward voltage VF , optimum for low voltage rectification


    Original     		PDF MA6Z718 MA6S718)

    MA6S718

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA6S718 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 2.0 ± 0.1 0.65 0.65 • Features 6 2 5 3 4 0.7 ± 0.1 0.2 ± 0.05 • Small S-mini type 6-pin package • Non connected three elements incorporated in one package,


    Original     		PDF MA6S718 N-50BU PG-10N) SAS-8130) MA6S718

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing


    Original     		PDF 2002/95/EC) MA6Z718 MA6S718)

    6pin rl

    Abstract: "Switching diode" 6pin F MARKING 6PIN Switching diode 6pin marking 6pin
    Text: MA111 Schottky Barrier Diodes SBD MA6S718 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 1.25±0.1 ● Small S-Mini 6-pin package ● Independent three-element incorporated, enabling high density mount- 2.0±0.1 0.65 0.65 • Features


    Original     		PDF MA111 MA6S718 30MHz 2000MHz N-50BU PG-10N SAS-8130 6pin rl "Switching diode" 6pin F MARKING 6PIN Switching diode 6pin marking 6pin

    MA6S718

    Abstract: MA6Z718
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 • Features • Three isolated elements are contained in one package, allowing high-density mounting • Forward voltage VF , optimum for low voltage rectification


    Original     		PDF MA6Z718 MA6S718) MA6S718 MA6Z718

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features M Di ain sc te on na tin nc


    Original     		PDF 2002/95/EC) MA6Z718 MA6S718)

    MA6S718

    Abstract: MA6Z718
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm 2.0±0.1 (0.65)(0.65) 6 5 0.7±0.1 4 1.25±0.1 2.1±0.1 • Features 1 2 3 0.2±0.05 0 to 0.1 Symbol Rating


    Original     		PDF 2002/95/EC) MA6Z718 MA6S718) SC-88 MA6S718 MA6Z718

    MA6S718

    Abstract: MA6Z718
    Text: Schottky Barrier Diodes SBD MA6Z718 (MA6S718) Silicon epitaxial planar type For switching circuits • Features 1 6 2 5 3 4 0.7 ± 0.1 0.2 ± 0.05 2.0 ± 0.1 0.65 0.65 • Small S-mini type 6-pin package • Non connected three elements incorporated in one package,


    Original     		PDF MA6Z718 MA6S718) MA6S718 MA6Z718

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


    Original     		PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    MA716

    Abstract: MA7D50 ma741 MA10799
    Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119  MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742


    Original     		PDF MA10700) MA10701) MA10702) MA10703) MA10704) MA10705) MA10798) MA10799) MA4S713) MA6S718) MA716 MA7D50 ma741 MA10799

    D83 ZENER

    Abstract: zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220
    Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 MA5Z200 Ir max. (M ) 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 216 MA5Z300 1 MA5Z330 1 Type No. Zener Diodes V z min. typ. (V) (V) Sz typ. (m V /t) Vr max. (V) lz lz (mA) (mA) 0.31 0.1 0.1 190 200 220 0.31


    OCR Scan     		PDF MA5Z200 MA5Z220 MA5Z240 MA52270 MA5Z300 MA5Z330 MA6Z100WA MA6Z100WK MA700/A MA704/A D83 ZENER zener d83 ma5z270 ma741 D83 004 MA776 MA6Z100WA MA6Z DIL 330 ma5z220

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA122 MA123 30MAX ES1100 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
    Text: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35


    OCR Scan     		PDF 1SS309 MA123 E1388 11MIN -16UNF' 48MAX DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC

    628B

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 628B DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    Untitled

    Abstract: No abstract text available
    Text: Diodes # AM A5Z Series S Mini 2 Pin Type (D3 Ir max. Vr (M ) (V) MA5Z200 1 160 MA5Z220 1 176 MA5Z240 1 192 MA52270 1 MA5Z300 MA5Z330 Type No. ★Under development Zener Diodes V z Sz typ. (m V /t) min. (V) typ. (V) max. (V) 0.1 190 200 220 0.1 210 220 240


    OCR Scan     		PDF MA5Z200 MA5Z220 MA5Z240 MA52270 MA5Z300 MA5Z330 4S713* MA714 MA718Ã MA6S718

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 m5x0.8
    Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA123 60MAX- 22MAX HI246 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 m5x0.8

    PC802

    Abstract: DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803
    Text: 1 74 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) 80 80 300 300 85 85 35 35 35 fe aï V r rm Io ,If* I fm <°C) (nA) I fsm cc> (A) Vpmax IR'JWl m * iS Æ ism tÉ (WJAfc I Rmax fk ñ (V) I F <mA) ( ß A) V f (V) <°C)


    OCR Scan     		PDF 1SS309 MA6S121 MA6S718 100MHz) MA122 MA123 PC802 DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803

    DAP801

    Abstract: DA-6NC DAP803 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' * s * y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 25MAX 24MIN 25M1N 25MIN 51IAX 12MIN DAP801 DA-6NC DAP803 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802

    DA-4P

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: 174 - - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N * * s ' * s y y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m * iSÆismtÉ (WJAfc I Rmax fk ñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA122 MA123 EI494 DA-4P DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401