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    MA40192 Search Results

    MA40192 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MA40192 Advanced Semiconductor Diode Original PDF
    MA40192 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    MA40192 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ASI30285

    Abstract: MA40192
    Text: MA40192 SCHOTTKY BARRIER MIXER DIODE DESCRIPTION: The MA40192 is a Silicon Schottky Barrier Diode Designed for Starved LO Mixer Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES: • Replacement for MA/COM MA40192 • Available as matched pairs and matched quads


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    PDF MA40192 MA40192 ASI30285 ASI30285

    MA40181

    Abstract: No abstract text available
    Text: A jf e C S M _ Low 1/f Noise Low Barrier Schottky Doppler Mixer Diodes Features • LOW GUARANTEED 1/f NOISE AT 10 KHz ■ LOW LOCAL OSCILLATOR REQUIREMENTS ■ WIDE RANGE OF AVAILABLE


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    PDF a-9464 MA40181

    MA40208

    Abstract: a4e2 MA40420 MA40268-276 MA4E920 MA4002 MA40079 MA4E201 ma4e928 ma4882
    Text: Schottky Diodes SELECTION GUIDE MODEL NUMBER PAGE MA40016 6-67 MA40Q17. 6-67 MA40018 . 6-67 MA4O019. 6-67 MA4Q020 . 6-67


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    PDF MA40072 MA40076 MA40077 MA40078 MA40079 MA40080 MA40083 MA40084 MA40085 MA40086 MA40208 a4e2 MA40420 MA40268-276 MA4E920 MA4002 MA40079 MA4E201 ma4e928 ma4882

    MA40181

    Abstract: No abstract text available
    Text: Afeom m an A M P com pany Low 1/f Noise, Low Barrier Schottky Doppler Mixer Diodes V 2.00 Features Case Styles • Low G u a ra n tee d 1 / f N o ise At 10 KHz sions • Low Local O scilla to r R eq u irem en ts See appendix for complete dimen­ II • W id e R an ge O f A vailable P a ck a g es


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    PDF

    ma40181

    Abstract: No abstract text available
    Text: AjfeW A Low 1/f Noise Low Barrier Schottky Doppler Mixer Diodes Features • LOW GUARANTEED 1/f NOISE AT 10 KHz ■ LOW LOCAL OSCILLATOR REQUIREMENTS ■ WIDE RANGE OF AVAILABLE PACKAGES ■ USEFUL FOR STARVED LO MIXERS Description Applications This family of low barrier silicon Schottky diodes is de­


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