MA3X787
Abstract: MA787
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)
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2002/95/EC)
MA3X787
MA787)
MA3X787
MA787
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit VR 50 V VRRM 50 V IFM
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MA3X787
MA787)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)
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MA3X787
MA787)
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MA3X787
Abstract: MA787 VR501
Text: Schottky Barrier Diodes SBD MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage
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MA3X787
MA787)
SC-59
MA3X787
MA787
VR501
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 Symbol Reverse voltage
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2002/95/EC)
MA3X787
MA787)
SC-59
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MA3X787
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X787 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current*
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MA3X787
O-236
SC-59
Al-40
MA3X787
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panasonic ma diodes sc-59 Marking
Abstract: MA3X787 MA787
Text: Schottky Barrier Diodes SBD MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage
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MA3X787
MA787)
SC-59
panasonic ma diodes sc-59 Marking
MA3X787
MA787
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MA3X787
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X7960G Silicon epitaxial planar type For super high speed switching For small current rectification • Features ■ Package • Two MA3X787 is contained in one package (of a type in the
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2002/95/EC)
MA4X7960G
MA3X787
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MA3X787
Abstract: MA787
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)
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2002/95/EC)
MA3X787
MA787)
MA3X787
MA787
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MA3X787
Abstract: MA787 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X787 (MA787) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Repetitive peak reverse voltage Peak forward current VR 50 V VRRM 50 V IFM 300 mA Average forward current IF(AV) 100 mA Non-repetitive peak forward surge current*
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MA3X787
MA787)
O-236
SC-59
MA3X787
MA787
panasonic ma diodes sc-59 Marking
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IR 50
Abstract: MA3X787 MA787
Text: Schottky Barrier Diodes SBD MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Symbol Rating Unit Reverse voltage
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MA3X787
MA787)
IR 50
MA3X787
MA787
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MA3X787
Abstract: MA787
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X787 (MA787) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95)
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MA3X787
MA787)
MA3X787
MA787
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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DIODE marking S4 59A
Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3
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REJ16G0002-2200
DIODE marking S4 59A
DIODE 1N4148 LL-34
Zener Diode SOD-323 marking code a2
marking v6 zener diode
fairchild marking codes sot-23
RKZ18B2KG
TWPEC 1w402
MTZJ SERIES ZENER DIODES
702 SOT-23 marking KJ
marking 513 SOD-323
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MA7D52
Abstract: No abstract text available
Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)
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MA2C700
MA2C700A
MA2C719
MA2C723
MA2D749
MA2D749A
MA2D750
MA2D755
MA2D760
MA2H735
MA7D52
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4X796 (MA796) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95) 4 2 1 0.60+0.10 –0.05 Rating Unit VR 50 V Reverse voltage
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MA4X796
MA796)
MA3X787
MA787)
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Text: Diodes Switching Diodes. K2 Switching Diodes . K2
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MA24D56
MA24D58
MA24D70
MA24D74
MA3D749
MA3D749A
MA3D750
MA3D750A
MA3D752
MA3D752A
k11 zener diode
zener diode k11
diode k6
MA3DD82
MA2B150
MA3DF40
MA3DF30
MA2B171
MA21D350
MA3df3
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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MA3X787
Abstract: MA4X796 MA787 MA796
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X796 (MA796) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 0.16+0.1 –0.06 (0.95) (0.95)
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MA4X796
MA796)
MA3X787
MA4X796
MA787
MA796
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MA716
Abstract: MA7D50 ma741 MA10799
Text: Reference • Part Number List The order of Conventional Part Number (C Part No.) M Part No. Page (C Part No.) M Part No. Page (C Part No.) M Part No. Page (MA10700) MA3J700 113 (MA741WK) MA3J741E 119 MA2D760 23 (MA10701) MA3X701 151 (MA742) MA3J742
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MA10700)
MA10701)
MA10702)
MA10703)
MA10704)
MA10705)
MA10798)
MA10799)
MA4S713)
MA6S718)
MA716
MA7D50
ma741
MA10799
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MA3X787
Abstract: MA4X796 MA787 MA796
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X796 (MA796) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 0.16+0.1 –0.06 M
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2002/95/EC)
MA4X796
MA796)
MA3X787
MA4X796
MA787
MA796
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MA3X787
Abstract: MA4X796 MA787 MA796
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA4X796 (MA796) Silicon epitaxial planar type For super high speed switching For small current rectification Unit: mm 2.90+0.02 –0.05 1.9±0.2 0.16+0.1 –0.06 M
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MA4X796
MA796)
MA3X787
MA4X796
MA787
MA796
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