marking m3f
Abstract: MA3X721D MA3X721E
Text: Schottky Barrier Diodes SBD MA3X721D, MA3X721E Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition (for the single diode)
|
Original
|
PDF
|
MA3X721D,
MA3X721E
MA3X721s
O-236
SC-59
marking m3f
MA3X721D
MA3X721E
|
MA3X721D
Abstract: MA3X721E MA721WA MA721WK panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X721D, MA3X721E (MA721WA, MA721WK) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 1.45 0.95 0.65 ± 0.15 1 3 + 0.1 • Two MA3X721s are contained in one package • Allowing to rectify under (IF(AV) = 200 mA) condition
|
Original
|
PDF
|
MA3X721D,
MA3X721E
MA721WA,
MA721WK)
MA3X721s
MA3X721D
MA3X721E
MA721WA
MA721WK
panasonic ma diodes sc-59 Marking
|
MA4X724
Abstract: MA724 M1T diode
Text: Schottky Barrier Diodes SBD MA4X724 (MA724) Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 • Features 0.4 − 0.05 1.45 1.5 − 0.05
|
Original
|
PDF
|
MA4X724
MA724)
MA3X721s
MA4X724
MA724
M1T diode
|
MA4X726
Abstract: MA726
Text: Schottky Barrier Diodes SBD MA4X726 (MA726) Silicon epitaxial planar type For super-high speed switching circuit For small current rectification Unit : mm + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 • Features + 0.1 1.5 − 0.05 1 0.4 − 0.05 0.5 0.95 4 2 + 0.1
|
Original
|
PDF
|
MA4X726
MA726)
MA4X726
MA726
|
MA4X724
Abstract: M1T diode
Text: Schottky Barrier Diodes SBD MA4X724 Silicon epitaxial planar type Unit : mm + 0.2 For super-high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 0.65 ± 0.15 0.65 ± 0.15 + 0.1 0.4 − 0.05 1.45 1.5 − 0.05 1 0.5 0.95 4 0.95 2
|
Original
|
PDF
|
MA4X724
MA4X724
M1T diode
|
Marking m3c
Abstract: m3c 55 MA3X740 diode M3C 055
Text: Schottky Barrier Diodes SBD MA3X740 Silicon epitaxial planar type Unit : mm + 0.2 For super high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 1.45 1 + 0.1 3 2 Repetitive peak reverse voltage Average forward current Single Peak forward
|
Original
|
PDF
|
MA3X740
O-236
SC-59
Marking m3c
m3c 55
MA3X740
diode M3C 055
|
ETC 529 DIODE
Abstract: MA3X740 MA740 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Repetitive peak reverse voltage Average forward current Single Peak forward current Single VR 30 V VRRM 30 V IF(AV) 200 mA Double*1 Single Non-repetitive peak forward surge current*2 Double*1
|
Original
|
PDF
|
MA3X740
MA740)
O-236
SC-59
ETC 529 DIODE
MA3X740
MA740
panasonic ma diodes sc-59 Marking
|
MA4X726
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA4X726 Silicon epitaxial planar type Unit : mm + 0.2 For super-high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 0.65 ± 0.15 + 0.1 1.5 − 0.05 0.4 − 0.05 1.45 0.65 ± 0.15 1 0.4 − 0.05 0.5
|
Original
|
PDF
|
MA4X726
MA4X726
|