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    M54HC279 Search Results

    M54HC279 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M54HC279 STMicroelectronics QUAD S - R LATCH Original PDF
    M54HC279F1 SGS-Thomson QUAD S - R LATCH Scan PDF
    M54HC279F1 STMicroelectronics QUAD S - R LATCH Scan PDF
    M54HC279F1R STMicroelectronics QUAD S - R LATCH Original PDF

    M54HC279 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74hc279

    Abstract: M74HC279C1R SGS 54HC M54HC279 M54HC279F1R M74HC279 M74HC279B1R M74HC279M1R of 74ls279 74ls279b1r
    Text: M54HC279 M74HC279 QUAD S - R LATCH . . . . . . . . HIGH SPEED tPD = 12 ns TYP. AT VCC = 5 V LOW POWER DISSIPATION ICC = 2 µA (MAX.) AT TA = 25 °C HIGH NOISE IMMUNITY VNIH = VNIL = 28 % VCC (MIN.) OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS SYMMETRICAL OUTPUT IMPEDANCE


    Original     		PDF M54HC279 M74HC279 54/74LS279 M54HC279F1R M74HC279M1R M74HC279B1R M74HC279C1R M54/74HC279 74hc279 M74HC279C1R SGS 54HC M54HC279 M54HC279F1R M74HC279 M74HC279B1R M74HC279M1R of 74ls279 74ls279b1r

    74hc279

    Abstract: No abstract text available
    Text: r z j SG S TH O M SO N *7# fflDMO IIL[i g»)RDO i M54HC279 M74HC279 QUAD S - R LATCH • HIGH SPEED tPD = 13 ns (TYP.) at VCc = 5V ■ LOW POWER DISSIPATION lCc = 2 /iA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY V NIH = V n i l = 28 % VCc (MIN.) ■ OUTPUT DRIVE CAPABILITY


    OCR Scan     		PDF M54HC279 M74HC279 54/74LS279 M54HC279 M74HC279 M54/74HC279 74hc279

    Untitled

    Abstract: No abstract text available
    Text: SbE D • T 'î E' îBa ? ÜÜ4D1GS b2S ■ SfiTH T“ * tt-Q 7 -AT / = 7 SCS THOM SON M54HC279 HOmiiLHigTOMS_ M74HC279 s G S- THOMSON _ QUAD s - R LATCH ■ HIGH SPEED tpD = 13 ns TYP. at VCc = 5V ■ LOW POWER DISSIPATION Ice = 2 i iA (MAX.) at Ta = 25°C


    OCR Scan     		PDF M54HC279 M74HC279 54/74LS279 7T2T237

    74hc279

    Abstract: 74LS279 equivalent 54HC 74HC M54HC279 M74HC279 SGS 54HC 74ls279
    Text: SGS-THOMSON M54HC279 M74HC279 HLKgTTWRDO^i QUAD S - R LATCH HIGH SPEED tpo = 13 ns TYP. at V c c = 5V LOW POW ER DISSIPATION Ic e = 2 iiA (MAX.) at TA = 2 5 °C HIGH NOISE IM M UN ITY V n IH = V n IL = 2 8 % VCC (MIN.) O UTPU T DRIVE CAPABILITY 10 LSTTL LOADS


    OCR Scan     		PDF M54HC279 M74HC279 54/74LS279 M54/74HC279 M54/74HC279 74hc279 74LS279 equivalent 54HC 74HC M74HC279 SGS 54HC 74ls279

    74hc279

    Abstract: 54HC 74HC M54HC279 M74HC279
    Text: M54HC279 M74HC279 ¿3»- HS-CMOS" -I: INTEGRATED CIRCUITS PRELIMINARY DATA _ f1 0 H N QUAD S - R LATCH DESCRIPTION f i S T h e M 5 4 /7 4 H C 2 7 9 is a h ig h s p e e d C M O S Q U A D S - R L A T C H fa b ric a te d in silicon g a te C 2M O S te c h n o lo g y . It h a s th e s a m e high s p e e d p e rfo r­


    OCR Scan     		PDF M54HC279 M74HC279 M54/74HC279 M74HC279 74hc279 54HC 74HC

    74HC279

    Abstract: No abstract text available
    Text: M54HC279 M74HC279 Æ 7 SGS-THOMSON UD [S Q [ilLIl(g¥ (Q)iD(gi QUAD S - R LATCH • HIGH SPEED tPD = 13 ns (TYP.) at V cc= 5V ■ LOW POWER DISSIPATION Ice = 2 nA (MAX.) at TA = 25°C ■ HIGH NOISE IMMUNITY VNIH = VNIL= 28% VCC (MIN.) ■ OUTPUT DRIVE CAPABILITY


    OCR Scan     		PDF M54HC279 M74HC279 54/74LS279 M74HC279 M54/74HC279 M54/74HC279 74HC279

    Untitled

    Abstract: No abstract text available
    Text: r = 7 ^ 7# S G S -T H O M S O N [ M t M iy iû I M K S M 54 H C 279 M 7 4 H C 279 QUAD S - R LATCH • HIGHSPEED tP D = 12 ns TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 2 nA (MAX.) AT Ta = 25 ’C ■ HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)


    OCR Scan     		PDF 54/74LS279 M54HC279F1R M74HC279M1R M74HC279B1R M74HC279C1R 0G5M657 M54/M74HC279 DS455Ã