Untitled
Abstract: No abstract text available
Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Revision 1.3 (Jan. 11, 2008) - Modify ICC spec - Modify tRC(min), tRFC(min), tSAC(max), tSS(min), tSH(min) and tSHZ(max)
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M52D64164A
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Untitled
Abstract: No abstract text available
Text: ESMT M52D64164A Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3
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M52D64164A
M52D64164A-10TG
100MHz
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Untitled
Abstract: No abstract text available
Text: ESMT M52D64164A Revision History Revision 1.0 Jan. 15, 2007 -Original Revision 1.1 (Mar. 02, 2007) - Delete BGA ball name of packing dimensions Revision 1.2 (Oct. 08, 2007) - Modify DC/AC characteristics Elite Semiconductor Memory Technology Inc. Publication Date: Oct. 2007
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M52D64164A
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Untitled
Abstract: No abstract text available
Text: ESM T M52D64164A 2E Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES ORDERING INFORMATION 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs
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M52D64164A
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RA10X
Abstract: No abstract text available
Text: ESMT M52D64164A Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3
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M52D64164A
M52D64164A-10TG
100MHz
RA10X
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Untitled
Abstract: No abstract text available
Text: ESMT M52D64164A SDRAM 1M x 16 Bit x 4 Banks Synchronous DRAM FEATURES y y y y y y y y y y ORDERING INFORMATION 1.8V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs - CAS Latency 2 & 3 - Burst Length (1, 2, 4, 8 & full page)
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M52D64164A
M52D64164A-10TG
M52D64164A-10BG
100MHz
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Untitled
Abstract: No abstract text available
Text: ESMT M52D64164A 2E Mobile SDRAM 1M x 16 Bit x 4 Banks Mobile Synchronous DRAM FEATURES ORDERING INFORMATION 1.8V power supply LVCMOS compatible with multiplexed address Four banks operation MRS cycle with address key programs
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M52D64164A
M52D64164A-5BG2E
M52D64164A-6BG2E
M52D64164A-7BG2E
200MHz
166MHz
143MHz
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M13S2561616A-5TG
Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now
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256Kb
40/44L-TSOPII
M11B416256A-25JP
M11B416256A-35TG
M11L416256SA-35JP
M11L416256SA-35TG
40L-SOJ
44-40L-TSOPII
128Mb
M13S2561616A-5TG
90-FBGA
M12L64164A-7T
M13S2561616A -5T
M11B416256A-25JP
diode 6BG
90FBGA
M12L128168A-6TG
M12L16161A
TSOPII
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