Abstract: HMF-0600
Text: HA RR IS MU S E M I C O N D U C T O R J*j HARRIS tbE I • M3052Î.1 OOOOlfal S « H Î 1 S HMF-06000 Power Optimized GaAs FET 2-18 GHz PRODUCT DATA Features * +24.5 dBm Output Power with 8 dB Associated Gain at 8 GHz * Large Cross Section Tl/Pt/Au Gates Enhance Durability and Reliability