LTP70N06P
Abstract: LTP*70n06p POWER MOSFET Rise Time N-CHANNEL 60V
Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control UPS RDS ON = 11.5 mΩ, Typ = 9 mΩ
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LTP70N06P
300us,
O-220
LTP70N06P
LTP*70n06p
POWER MOSFET Rise Time
N-CHANNEL 60V
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LTP*70n06p
Abstract: ltp70N06 LTP70N06P diode 60v 1a
Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control RDS ON = 11.5 mΩ, Typ = 9 mΩ UPS
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Original
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PDF
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LTP70N06P
LTP*70n06p
ltp70N06
LTP70N06P
diode 60v 1a
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LTP*70n06p
Abstract: LTP70N06P LTP70N06 specifications of power mosfet LTP70N
Text: LTP70N06P N-Channel 60V Power MOSFET Features: Avalanche Rugged Technology Rugged Gate Oxide Technology High di/dt Capability Improved Gate Charge Application BVDSS = 60 V, Switching DC-DC converter and DC motor control RDS ON = 11.5 mΩ, Typ = 9 mΩ UPS
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Original
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PDF
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LTP70N06P
LTP*70n06p
LTP70N06P
LTP70N06
specifications of power mosfet
LTP70N
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