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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode φ5.0±0.2 7.65±0.2 • Features 1.5 2-0.8 max. 2-0.6±0.15 (2.0) 25.6±1.0 5.05±0.3 (1.0) • High-power output, high-efficiency: Ie = 9 mW/sr (min.)
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Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode M Di ain sc te on na tin nc ue e/ d φ5.0±0.2 7.65±0.2 • Features 1.5 2-0.8 max. 2-0.6±0.15 (2.0) 25.6±1.0 5.05±0.3 (1.0)
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LNA2901L
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LNA2901L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors
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LNA2901L
LNA2901L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode φ5.0±0.2 M Di ain sc te on na tin nc ue e/ d 7.65±0.2 • Features 1.5 25.6±1.0 2-0.8 max. di p Pl lan nclu ea e se pla m d m des
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LNA2901L
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LNA2901L
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm ø5.0±0.2 7.65±0.2 1.0 Not soldered 2.25 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr min. Emitted light spectrum suited for silicon photodetectors
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LNA2901L
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LNA2901L
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Untitled
Abstract: No abstract text available
Text: Infrared Light Emitting Diodes LNA2901L For optical control systems Not soldered 2.0 max. GaAs Infrared Light Emitting Diode φ5.0±0.2 7.65±0.2 • Features 1.5 2-0.8 max. 2-0.6±0.15 (2.0) 25.6±1.0 5.05±0.3 M Di ain sc te on na tin nc ue e/ d (1.0)
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Infrared Emitting Diode
Abstract: LNA2901L
Text: Panasonic Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package
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LNA2901L
Infrared Emitting Diode
LNA2901L
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2901L G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • High-power output, high-efficiency : Ie = 9 mW /sr min. Light emitting spectrum suited for silicon photodetectors
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LNA2901L
0102Q.
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Untitled
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2901L G aAs Infrared Light Emitting Diode For optical control systems • Features • High-power output, high-efficiency : Ie = 9 mW/sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package
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LNA2901L
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LNC703PS
Abstract: LN9P01S P50024 LNA4401 PR0022 LN68
Text: Light Emitting Diodes • Red Light Emitting Diodes for Control Appli cation Package Type No. No. 5 LN124W For control If Side view LNA4402F max (V) 40 1 2.6 680 30 PSF02-1 40 2.5 2.2 700 80 02-1 40 1.8 2.2 700 30 5 $ Plastic P5F02-1 LN145W Ap e typ typ
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LN124W
P5F02-1
PSF02-1
LN155
LN184
LN189L
PR002-1
PR002-2
LNC703PS
LN9P01S
P50024
LNA4401
PR0022
LN68
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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