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    Untitled

    Abstract: No abstract text available
    Text: DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 LN30402 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 


    Original     		PDF DIM250PHM33-TS000 DS6092-1 LN30402)

    Untitled

    Abstract: No abstract text available
    Text: DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-1 April 2013 LN30402 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 


    Original     		PDF DIM250PHM33-TS000 DS6092-1 LN30402)