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    ESM 310

    Abstract: DIM2400ESS12-A000
    Text: DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 LN27616 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM2400ESS12-A000 DS5840-1 DS5840-2 LN27616) DIM24ct ESM 310 DIM2400ESS12-A000

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    Abstract: No abstract text available
    Text: DIM2400ESS12-A000 Single Switch IGBT Module Replaces DS5840-1.1 DS5840-2 October 2010 LN27616 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM2400ESS12-A000 DS5840-1 DS5840-2 LN27616)