Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LN27614 Search Results

    LN27614 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIM1800ESS12-A000

    Abstract: No abstract text available
    Text: DIM1800ESS12-A000 Single Switch IGBT Module Replaces DS5857-1.1 DS5857-2 October 2010 LN27614 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM1800ESS12-A000 DS5857-1 DS5857-2 LN27614) DIM1800ESS12-A000

    Untitled

    Abstract: No abstract text available
    Text: DIM1800ESS12-A000 Single Switch IGBT Module Replaces DS5857-1.1 DS5857-2 October 2010 LN27614 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  Non Punch Through Silicon  Isolated Cu Base with Al2O3 Substrates VCES VCE(sat) * (typ) IC (max)


    Original     		PDF DIM1800ESS12-A000 DS5857-1 DS5857-2 LN27614) DIM1800ESS12-A000 120ames