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    Abstract: No abstract text available
    Text: DIM800DDM12-A000 Dual Switch IGBT Module Replaces DS5528-3.0 DS5528-4 October 2009 LN26748 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Non Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK) (max)


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    PDF DIM800DDM12-A000 DS5528-3 DS5528-4 LN26748)

    DIM800DDM12-A000

    Abstract: gn 90
    Text: 6 3 DS5528-4 October 2009 LN26748 14 ±0.2 ±0.2 Replaces DS5528-3.0 Dual Switch IGBT Module 11.5 DIM800DDM12-A000 FEATURES ±0.2 • ±0.2 10µs Short Circuit Withstand 18 6 x O7 KEY PARAMETERS 28 ±0.5  High44 Thermal ±0.2 Cycling Capability  Non Punch


    Original
    PDF DS5528-4 LN26748) DS5528-3 DIM800DDM12-A000 DIM800DDM12-A000 gn 90