TSSOP8 Package k410
Abstract: No abstract text available
Text: LM158W, LM258W, LM358W Low power dual operational amplifiers Datasheet - production data Features • ESD internal protection: 2 kV • Internal frequency compensation implemented • Large DC voltage gain: 100 dB N DIP8 Plastic package • Wide bandwidth (unity gain): 1.1 MHz
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LM158W,
LM258W,
LM358W
DocID9159
TSSOP8 Package k410
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Untitled
Abstract: No abstract text available
Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Datasheet −production data Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated)
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LM158W-LM258W-LM358W
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PDF
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K418
Abstract: k415 TSSOP8 Package k410 3M Philippines
Text: LM158W LM258W LM358W Low power dual operational amplifiers Datasheet − production data Features • ESD internal protection: 2 kV ■ Frequency compensation implemented internally ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz
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Original
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LM158W
LM258W
LM358W
K418
k415
TSSOP8 Package k410
3M Philippines
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PDF
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Untitled
Abstract: No abstract text available
Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Datasheet −production data Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated)
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Original
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LM158W-LM258W-LM358W
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PDF
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transistor k413
Abstract: 258WY k414 K411 k412 k415 K-412 MSO8 LM258WYST TSSOP8 Package k410
Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator
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Original
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LM158W-LM258W-LM358W
transistor k413
258WY
k414
K411
k412
k415
K-412
MSO8
LM258WYST
TSSOP8 Package k410
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PDF
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