L8821P
Abstract: No abstract text available
Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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L8821P
L8821P
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TB197
Abstract: L8821P
Text: TB197 L8821P Pout vs Pin, Freq=512MHz, Vds=12.5Vdc, Idq=0.2A 4.0 12.25 Linear @ 160mw 12.00 P1dB = 1.9W 3.5 11.75 11.50 3.0 11.25 2.5 Pout 11.00 10.75 2.0 Gain 10.50 10.25 1.5 10.00 1.0 9.75 Efficiency @ 2W=44% 9.50 0.5 9.25 0.0 0.05 0.1 0.15 0.2 0.25 Pin in Watts
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TB197
L8821P
512MHz,
160mw
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L8821P
Abstract: LK421
Text: Polyfet RF Devices TB-170 L8821P->LK421 Pout vs Pin Freq=30MHz Vds=12.5Vdc Idq=1.2A 24 27.0 Linear @5W 18 26.0 Pout 12 25.0 Gain Efficiency @15W= 35% 6 24.0 23.0 0.02 0.04 Pin in Watts Page 1 0.06 0.08 0.1 Gain in dB Pout in Watts P1dB=14W Polyfet RF Devices
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TB-170
L8821P--
LK421
30MHz
250MHz
L8821P
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tic 136
Abstract: 10NF 470PF 47UF L8821P 136-174MHz
Text: R F in C1 15PF W =1" pcb L = .4 " W =1" pcb L = .4 " C2 470PF C3 10NF R1 15 3 tu rn s L1 22AW G 10K pot L8821P C8 68PF R 3 2 .2 K 7 .5 V z e n e r W =1" L = .4 " pcb 1 2 tu rn s 22awg to ro id 850m u pcb W =1" 2/7/03 C6 10PF 2 tu rn s 22awg C9 10NF L = .4 "
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470PF
L8821P
22awg
200PF
L8821P
12Vdc
400ma
136-174Mhz
tic 136
10NF
470PF
47UF
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L8821P
Abstract: No abstract text available
Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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L8821P
L8821P
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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L8821P
Temperatur8821P
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices L8821P General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
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L8821P
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MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
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L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
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rf push pull mosfet power amplifier
Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30
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200NUM1
SQ221
LK822
LK722
LX521
rf push pull mosfet power amplifier
100 watt hf mosfet 12 volt
150w amplifier RF VHF 139 144 mhz
uhf 150w mosfet
150w amplifier RF VHF 139 - 144 mhz
LDMOS 15w
ldmos l2711 vhf
LP801
LK602
LR941
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