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    DME25

    Abstract: L7C171PC85 DME20
    Text: L7C171/172 4K x 4 Static RAM Features Description □ 4K by 4 Static RAM with separate I/O , transparent write L7C171 , or high impedance write (L7C172) The L7C171 and L7C172 are high­ performance, low-power CMOS static RAMs. The storage cells are organ­


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    4Kx4

    Abstract: No abstract text available
    Text: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171


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    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC EbE D • SShSTDS GGG1GG2 1 ■ _ _ T - 4 ¿ -2 3 -0 S ' 4K x 4 Static RAM FEATURES □ 4K x 4 Static RAM with Separate I /O , Transparent W rite L7C171 , or H igh Impedance Write (L7C172) □ Auto-Powerdown Design


    OCR Scan     		PDF L7C171) L7C172) 24-pin 28-pin L7C171 L7C172 125cC

    Untitled

    Abstract: No abstract text available
    Text: 4K x 4 Static RAM L 7C 171/172 Features Description_ □ 4K by 4 Static RAM with separate I/O , transparent write L7C171 , or high impedance write (L7C172) The L7C171 and L7C172 are highperformance, low-power CMOS static RAMs. The storage cells are organ­


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    Untitled

    Abstract: No abstract text available
    Text: L 7 C 171/172 4K x 4 Static RAM DESCRIPTION FEATURES □ 4K x 4 Static RAM with Separate I/O , Transparent Write L7C171 , or High Impedance Write (L7C172) □ Auto-Powerdown Design □ Advanced CMOS Technology □ Highspeed — to 8 ns maximum □ Low Power Operation


    OCR Scan     		PDF L7C171) L7C172) CY7C171/172 24-pin 28-pin L7C171/172 L7C171 L7C172

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVI CES "INC IbE » • SSbS'îOS DQDÙbOb b ■ 4K x 4 Static RAM L7C171/172 T-Hé-ZS -OS' Features Description □ 4K by 4 Static RAM with separate I/O , transparent write L7C171 , or high impedance write (L7C172) The L7C17I and L7C172 are highperformance, low-power CMOS static


    OCR Scan     		PDF L7C171) L7C172) CY7C171/172 24-pin 28-pin L7C171/172 L7C17I L7C172

    Untitled

    Abstract: No abstract text available
    Text: L 7 C 1 7 1 /1 7 2 4K x 4 Static RAM FEATURES accesses which are longer than the The L7C171 and L7C172 are high­ performance, low-power CMOS static minimum access time, or when the memory is deselected. In addition, RAMs. The storage cells are organ­ ized as 4096 words by 4 bits per word. data may be retained in inactive stor­


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    Untitled

    Abstract: No abstract text available
    Text: L7C171/172 4K x 4 Static R A M DESCRIPTION FEATURES □ 4K x 4 Static RAM with Separate I/O , Transparent W rite L7C171 , or I Iigh Im pedance W rite (L7C172) □ A uto-Pow erdow n Design □ A dvanced CMOS Technology □ High Speed — to 8 ns m axim um


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    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Text: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


    OCR Scan     		PDF L7C167 L7C168 L7C170 L7C171 L7C172 L6116/ L6116L L7C183 CY7C183 L7C184 STATIC RAM 8464 IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram

    Package 48 LCC

    Abstract: No abstract text available
    Text: Static RAM Package Availability Guide Package Availability Code*2* Part No.O No. Pins Plastic DIP Sldebraze Hermetic DIP CerDIP SOIC Gull-Wing SOJ Plastic (J-Lead] LCC Ceramic LCC 16K Static RAMs K6 L7C167 20 P6 D7 C2 U3 W3 L7C168 20 P6 D7 C2 U3 W3 L7C170


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